3N50 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance :

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UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancemen

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www.DataSheet4U.com FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power fi

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ITA13N50R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 500V Lead Free Package and Finish RDS(ON)(Typ.) 0.4Ω ID 13A Features: ●

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FMH23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by

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SVF13N50T/F/PN_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is an N-channel enhancement mode power MOS field effect trans

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SVD13N50T/F_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD13N50T/F is an N-channel enhancement mode power MOS field effect transistor wh

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Silan Microelectronics SVF13N50CFJ_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50CFJ is an N-channel enhancement mode power MOS

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FQPF13N50CF — N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features • 13 A, 500 V, RDS(on)

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3A, 500V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s pr

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TSP13N50M/TSF13N50M TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar str

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N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 13 A 500 V 0.46Ω 37 nC z z z UPS APPLICATIONS z High effic

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SEMICONDUCTOR TECHNICAL DATA KF3N50FZ/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteris

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AOD3N50 3A, 500V N-Channel MOSFET General Description The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed t

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GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High

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N N- CHANNEL MOSFET R JCS13N50C MAIN CHARACTERISTICS ID 13 A VDSS 500 V Rdson-max（@Vgs=10V） 0.49Ω Qg-typ 27 nC z z z UPS APPLICATIONS z

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UNISONIC TECHNOLOGIES CO., LTD 3N50 3A, 500V N-CHANNEL POWER MOSFET Power MOSFET „ DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using

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FQP13N50C / FQPF13N50C — N-Channel QFET® MOSFET FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ November 2013 Description These N

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SVF13N50T/F/PN_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is an N-channel enhancement mode power MOS field effect trans

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3A, 500V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s pr

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