45N10 Datasheet | Specifications & PDF Download

IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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045N10N-VB TO220 045N10N-VB TO220 Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a C

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45N10-VB 45N10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A

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isc N-Channel MOSFET Transistor FDPF045N10A ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistanc

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MOSFET Metal Oxide Semiconductor Field Effect Transistor Bare Die OptiMOS™3 Power MOS Transistor Chip IPC045N10L3 Data Sheet Rev. 2.5 Final Industrial

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Isc N-Channel MOSFET Transistor STP45N10F7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·100% avalanche tested ·Minimum Lot-to-Lot var

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FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Fe

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Elektronische Bauelemente SPR45N10 45A , 100V , RDS(ON) 22 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif

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() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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www.DataSheet4U.com ® STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI V DSS 100

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www.DataSheet4U.com ® STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI V DSS 100

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FDPF045N10A N-Channel PowerTrench® MOSFET August 2014 FDPF045N10A N-Channel PowerTrench® MOSFET 100 V, 67 A, 4.5 mΩ Features • RDS(on) = 3.7 mΩ ( T

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FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Fe

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IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (F

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FDP045N10A / FDI045N10A MOSFET – N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW Description This N−Channel MOSFET is produced using ON Semiconductor’s a

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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HGP045N10S , HGB045N10S P-1 Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS T

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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FDP045N10A / FDI045N10A MOSFET – N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW Description This N−Channel MOSFET is produced using ON Semiconductor’s a

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