45N10 Datasheet | Specifications & PDF Download

IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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www.DataSheet4U.com Low VCE(sat) IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol VCE

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low ga

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MCU45N10HE3 Features • Split Gate Trench MOSFET Technology • AEC-Q101 Qualified • Moisture Sensitivity Level 1 • Extremely Low Switching Loss • Fast

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www.DataSheet4U.com Low VCE(sat) IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol VCE

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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045N10N-VB TO220 045N10N-VB TO220 Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a C

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HGP045N10S , HGB045N10S P-1 Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS T

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FDP045N10A / FDI045N10A MOSFET – N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW Description This N−Channel MOSFET is produced using ON Semiconductor’s a

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IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (F

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CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for

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45N10-VB 45N10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A

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STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Data

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FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Fe

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HGP045N10S , HGB045N10S P-1 Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS T

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FDP045N10A / FDI045N10A MOSFET – N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW Description This N−Channel MOSFET is produced using ON Semiconductor’s a

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HYG045N10NS1P/B Feature  100V/160A RDS(ON)=3.8mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avai

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