45N10 Datasheet | Specifications & PDF Download

IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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45N10-VB 45N10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A

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www.DataSheet4U.com MTW45N10E Preferred Device Power MOSFET 45 Amps, 100 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low ga

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HY045N10P/B Feature Description  100V/120A RDS(ON)= 4.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Device

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www.DataSheet4U.com Low VCE(sat) IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol VCE

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CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for

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STL45N10F7AG Automotive-grade N-channel 100 V, 20 mΩ typ., 18 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data F

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MOSFET - N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW FDP045N10A / FDI045N10A Description This N−Channel MOSFET is produced using onsemi’s advance POW

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www.DataSheet4U.com ® STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI V DSS 100

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Super high dense cell design for

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MOSFET - N-Channel, POWERTRENCH) 100 V, 164 A, 4.5 mW FDP045N10A / FDI045N10A Description This N−Channel MOSFET is produced using onsemi’s advance POW

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MCU45N10HE3 Features • Split Gate Trench MOSFET Technology • AEC-Q101 Qualified • Moisture Sensitivity Level 1 • Extremely Low Switching Loss • Fast

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataShee DataSheet4U.com DataShe

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Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http:/

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FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November 2013 Fe

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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