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FDI045N10A

N-Channel PowerTrench MOSFET

FDI045N10A Features

* RDS(on) = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A

* Fast Switching Speed

* Low Gate Charge, QG = 54 nC (Typ.)

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant Description Th

FDI045N10A General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Batter.

FDI045N10A Datasheet (687.79 KB)

Preview of FDI045N10A PDF

Datasheet Details

Part number:

FDI045N10A

Manufacturer:

Fairchild Semiconductor

File Size:

687.79 KB

Description:

N-channel powertrench mosfet.
FDP045N10A / FDI045N10A

* N-Channel PowerTrench® MOSFET FDP045N10A / FDI045N10A N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.5 mΩ November .

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TAGS

FDI045N10A N-Channel PowerTrench MOSFET Fairchild Semiconductor

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