4953 Datasheet | Specifications & PDF Download

Dual P - Channel Enhancement Mode Field Effect Transistor 4953 4953 DATASHEET P R ODUC T S UMMAR Y VDS S -30V ID -5.3A R DS (ON) ( m Ω ) Typ 50 @

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GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description GSM4953WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to

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www.DataSheet4U.com AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching D

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Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdA 4953A Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a r

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WSP4953A Dual P-Ch MOSFET General Description The WSP4953A is the highest performance trench P-ch MOSFETs with extreme high cell density , which prov

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HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide excellent RDS(ON), low gate

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HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate ch

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Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td 4953 Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rug

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Analog Power P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (：S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3A = 62mΩ@TYP RDS(

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RU4953BH P-Channel Advanced Power MOSFET Features • -30V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =70mΩ(Typ.)@VGS=-4.5V • Low On-Resistance • Supe

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CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION The CMT4953G provide the designer with the best combination of fast switching , ruggedi

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www.DataSheet4U.com EIM4953-4 ISSUED 02/12/2008 4.9-5.3 GHz Multi-Stage Power Amplifier EXCELICS EIM4953-4 FEATURES • • • • • • • 4.9-5.3GHz Operat

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 MT4953A P-Channel Enhancement Mo de  Field Effect Transistor Product Summary ‡ VDS= -20V ‡ ID= -5A ‡ RDS(ON) 60m @VGS= -10V/-4.9A ‡ RDS(O

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SSG4953P Elektronische Bauelemente -5.2 A, -30 V, RDS(ON) 52 m Dual P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” speci

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ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4953 is the Dual P-Channel logic enhancement mode power field effect transis

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A4952 and A4953 Full-Bridge DMOS PWM Motor Drivers FEATURES AND BENEFITS • Low RDS(on) outputs • Overcurrent protection (OCP) ▫ Motor short protectio

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SSM4953 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SO-8 8 7 6 5 ID (A) -4.5A RDS(ON) (mΩ) Max 60 @VGS = -10V 1 95 @VGS =

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