4N03 Datasheet | Specifications & PDF Download

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 30 V IPT004N03L Data Sheet Rev. 2.0 Final Power Management

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP034N03L，IIPP034N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancem

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating

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CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2020.01.13 Page No. : 1/9 N-Channel Logic Level Enhancement Mod

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested

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CMD04N03 / CMU04N03 N-Ch 30V Fast Switching MOSFETs General Description The 04N03 is the highest performance trench N-ch MOSFETs with extreme high c

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FNK04N03K FNK N-Channel Enhancement Mode Power MOSFET Description The FNK04N03K uses advanced trench technology and design to provide excellent RDS(O

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CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mo

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www.DataSheet4U.com IPB04N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDE

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CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSF

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CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating;

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www.DataSheet4U.com IPB04N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for

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IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low ga

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NTMD4N03, NVMD4N03 MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features • Designed for use in low voltage, high speed switching applications • U

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDE

Rating: 1 ★ (6 votes)