4N03 Datasheet | Specifications & PDF Download

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CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mo

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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www.DataSheet4U.com IPB04N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo

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CYStech Electronics Corp. Spec. No. : C807F3 Issued Date : 2009.12.02 Revised Date : 2015.09.04 Page No. : 1/9 N-Channel Enhancement Mode Power MOSF

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B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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NTMD4N03, NVMD4N03 MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features • Designed for use in low voltage, high speed switching applications • U

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CMD04N03 / CMU04N03 N-Ch 30V Fast Switching MOSFETs General Description The 04N03 is the highest performance trench N-ch MOSFETs with extreme high c

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CYStech Electronics Corp. Spec. No. : C789J3 Issued Date : 2011.12.12 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOS

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NTMD4N03R2 Power MOSFET 4 Amps, 30 Volts N−Channel SO−8 Dual Features www.DataSheet4U.com • Designed for use in low voltage, high speed switching ap

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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BSC014N03LS G-VB BSC014N03LS G-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0018 at VGS = 10 V

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Type OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate cha

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Philips Semiconductors Preliminary specification TrenchMOS transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 4.0mΩ ID 32A N‐Channel MOSFET UIS, Rg

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2020.01.13 Page No. : 1/9 N-Channel Logic Level Enhancement Mod

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