4N03 Datasheet | Specifications & PDF Download

B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating;

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R1524x-Y Series 200 mA 36 V Input Ultra Low Supply Current VR for Industrial Applications No. EA-354-180524 OUTLINE The R1524x is a CMOS-based ultra l

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FNK04N03K FNK N-Channel Enhancement Mode Power MOSFET Description The FNK04N03K uses advanced trench technology and design to provide excellent RDS(O

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IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP034N03L，IIPP034N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancem

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating

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6EDL04 family 6EDL04x065xR and 6EDL04N03PR family 650 V and 300 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

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BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellen

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IPB04N03LA IPI04N03LA, IPP04N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for

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www.DataSheet4U.com IPB04N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for

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MOSFET Metal Oxide Semiconductor Field Effect Transistor Bare Die OptiMOS™3 Power MOS Transistor Chip IPC014N03L3 Data Sheet Rev. 2.5 Final Industrial

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Elektronische Bauelemente SPR1084N03 108A , 30V , RDS(ON) 4.0 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” spe

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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Philips Semiconductors Preliminary specification TrenchMOS transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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CYStech Electronics Corp. Spec. No. : C889Q8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS

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