4N03 Datasheet | Specifications & PDF Download

B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

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T14N03G-VB T14N03G-VB Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.009 at V

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6EDL04 family 6EDL04x065xR and 6EDL04N03PR family 650 V and 300 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating

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BSC014N03LS G-VB BSC014N03LS G-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0018 at VGS = 10 V

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CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mo

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 30 V IPT004N03L Data Sheet Rev. 2.0 Final Power Management

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDE

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CMD04N03 / CMU04N03 N-Ch 30V Fast Switching MOSFETs General Description The 04N03 is the highest performance trench N-ch MOSFETs with extreme high c

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP034N03L，IIPP034N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.4mΩ ·Enhancem

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OptiMOS™2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JED

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114N03L-VB TO220 114N03L-VB TO220 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()

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CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2020.01.13 Page No. : 1/9 N-Channel Logic Level Enhancement Mod

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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FNK04N03 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK04N03 uses advanced trench technology and design to provide excellent RDS(ON)

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Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating;

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R1524x-Y Series 200 mA 36 V Input Ultra Low Supply Current VR for Industrial Applications No. EA-354-180524 OUTLINE The R1524x is a CMOS-based ultra l

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