OptiMOS®-T2 Power-Transistor Features • N-chann.
EMB04N03H - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested .MTB04N03H8 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mo.4N03L02 - Power-Transistor
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .CMD04N03 - N-Ch 30V Fast Switching MOSFETs
CMD04N03 / CMU04N03 N-Ch 30V Fast Switching MOSFETs General Description The 04N03 is the highest performance trench N-ch MOSFETs with extreme high c.14N03L - IPD14N03L
IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On.EMB04N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS, .FNK04N03D - N-Channel Power MOSFET
FNK04N03D FNK N-Channel Enhancement Mode Power MOSFET Description The FNK04N03D uses advanced trench technology and design to provide excellent RDS(O.FNK04N03K - N-Channel Power MOSFET
FNK04N03K FNK N-Channel Enhancement Mode Power MOSFET Description The FNK04N03K uses advanced trench technology and design to provide excellent RDS(O.EMB04N03HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested P.114N03L - N-Channel MOSFET
114N03L-VB TO220 114N03L-VB TO220 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ().MTB04N03E3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7 N-Channel Enhancement Mode Power MOSF.EMA04N03A - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 4mΩ ID 80A G UIS, Rg 10.EMB04N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested .CMU04N03 - N-Ch 30V Fast Switching MOSFETs
CMD04N03 / CMU04N03 N-Ch 30V Fast Switching MOSFETs General Description The 04N03 is the highest performance trench N-ch MOSFETs with extreme high c.IPP114N03LG - Power-Transistor
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.R1524N034B-TR-YE - Ultra Low Supply Current Voltage Regulator
R1524x-Y Series 200 mA 36 V Input Ultra Low Supply Current VR for Industrial Applications No. EA-354-180524 OUTLINE The R1524x is a CMOS-based ultra l.BSF024N03LT3G - Power-Transistor
BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellen.FNK04N03 - N-Channel Power MOSFET
FNK04N03 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK04N03 uses advanced trench technology and design to provide excellent RDS(ON).BSC014N03LSG - Power MOSFET
OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ.BSC014N03MSG - Power MOSFET
BSC014N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS.