N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A G UIS, Rg 100% Tested

B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating

4N03L03-VB TO220 4N03L03-VB TO220 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()

CYStech Electronics Corp. Spec. No. : C789H8 Issued Date : 2010.09.23 Revised Date : 2012.11.12 Page No. : 1/11 N-Channel Logic Level Enhancement Mo

EMB04N03G Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30 V RDSON (MAX

IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On

HYG014N03LR1P/B Feature  30V/275A RDS(ON)=1.3mΩ(typ.)@VGS = 10V RDS(ON)=1.6mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-

() CRSM014N03L6 SkyMOS6 N-MOSFET 30V, 1.1mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS6 technology • Extremely low on-resistance RDS(on) • Excelle

T14N03G-VB T14N03G-VB Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.009 at V

Elektronische Bauelemente SPR1084N03 108A , 30V , RDS(ON) 4.0 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” spe

Type OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate cha

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 90A G UIS, Rg 100% Tested

NTMD4N03R2 Power MOSFET 4 Amps, 30 Volts N−Channel SO−8 Dual Features www.DataSheet4U.com • Designed for use in low voltage, high speed switching ap

NTMD4N03, NVMD4N03 MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features • Designed for use in low voltage, high speed switching applications • U

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

EMB04N03HR Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30V RDSON (MAX

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 4.0mΩ ID 32A N‐Channel MOSFET UIS, Rg

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4mΩ ID 84A G UIS, Rg 100% Tested P

6EDL04 family 6EDL04x065xR and 6EDL04N03PR family 650 V and 300 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and