4N120 (UTC)
N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4N120
4.0A, 1200V N-CHANNEL POWER MOSFET
DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge
and ope
(54 views)
NTBG014N120M3P (ON Semiconductor)
SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L
NTBG014N120M3P
Features
• Typ. RDS(on) = 14 mW • Low Switching Losses (Typ.
(38 views)
IXTY1R4N120PHV (IXYS)
Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID2
(37 views)
NTH4L014N120M3P (ON Semiconductor)
SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L
NTH4L014N120M3P
Features
• Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching
(35 views)
IXFX24N120Q2 (IXYS)
HiPerFET Power MOSFET
Advance Technical Data
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Q-Class
IXFK 24N120Q2 IXFX 24N120Q2
VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω
(34 views)
IXTY1R4N120P (IXYS)
Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID2
(33 views)
IXGR24N120C3D1 (IXYS)
High speed PT IGBT
Preliminary Technical Information
GenX3TM 1200V IGBT IXGR24N120C3D1
High speed PT IGBTs for 20-50kHz Switching
VCES =
IC25 = VCE(sat) ≤
tfi(typ) =
(32 views)
IXTP1R4N120P (IXYS)
Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID2
(32 views)
IXGH24N120C3 (IXYS Corporation)
GenX3 1200V IGBT
Preliminary Technical Information
GenX3TM 1200V IGBT
High speed PT IGBTs for 10-50kHz Switching
IXGA24N120C3 IXGH24N120C3 IXGP24N120C3
VCES = IC25
(26 views)
IXGH24N120C3H1 (IXYS)
High speed PT IGBT
Preliminary Technical Information
GenX3TM 1200V IGBT IXGH24N120C3H1
High speed PT IGBTs for 10-50kHz Switching
VCES =
IC25 = VCE(sat) ≤
tfi(typ) =
(26 views)
IXGA14N120B (IXYS Corporation)
IGBT
IGBT
Optimized for switching up to 35 KHz
Preliminary data sheet
IXGA 14N120B IXGP 14N120B
VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V
Symbol VCES V
(23 views)
IXGP14N120B (IXYS Corporation)
IGBT
IGBT
Optimized for switching up to 35 KHz
Preliminary data sheet
IXGA 14N120B IXGP 14N120B
VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V
Symbol VCES V
(23 views)
IXTA1R4N120P (IXYS)
Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P
Symbol
VDSS VDGR VGSS VGSM ID2
(23 views)
IXGA24N120C3 (IXYS Corporation)
GenX3 1200V IGBT
Preliminary Technical Information
GenX3TM 1200V IGBT
High speed PT IGBTs for 10-50kHz Switching
IXGA24N120C3 IXGH24N120C3 IXGP24N120C3
VCES = IC25
(22 views)
IXGP24N120C3 (IXYS Corporation)
GenX3 1200V IGBT
Preliminary Technical Information
GenX3TM 1200V IGBT
High speed PT IGBTs for 10-50kHz Switching
IXGA24N120C3 IXGH24N120C3 IXGP24N120C3
VCES = IC25
(22 views)
IXFK24N120Q2 (IXYS)
HiPerFET Power MOSFET
Advance Technical Data
www.DataSheet4U.com
HiPerFETTM Power MOSFETs
Q-Class
IXFK 24N120Q2 IXFX 24N120Q2
VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω
(21 views)