UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N.
UTC
4N120 - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge and ope.
IXYS
IXGR24N120C3D1 - High speed PT IGBT
Preliminary Technical Information GenX3TM 1200V IGBT IXGR24N120C3D1 High speed PT IGBTs for 20-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) = .
IXYS
IXGH24N120C3H1 - High speed PT IGBT
Preliminary Technical Information GenX3TM 1200V IGBT IXGH24N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) = .
IXYS
IXTA1R4N120P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.
IXYS
IXTY1R4N120P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.
ON Semiconductor
NTBG014N120M3P - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ. .
IXYS
IXTP1R4N120P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.
IXYS
IXTY1R4N120PHV - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2.
IXYS
IXFX24N120Q2 - HiPerFET Power MOSFET
Advance Technical Data www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 24N120Q2 IXFX 24N120Q2 VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω .
IXYS
IXFK24N120Q2 - HiPerFET Power MOSFET
Advance Technical Data www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 24N120Q2 IXFX 24N120Q2 VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω .
IXYS Corporation
IXGA14N120B - IGBT
IGBT Optimized for switching up to 35 KHz Preliminary data sheet IXGA 14N120B IXGP 14N120B VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V Symbol VCES V.
IXYS Corporation
IXGP14N120B - IGBT
IGBT Optimized for switching up to 35 KHz Preliminary data sheet IXGA 14N120B IXGP 14N120B VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V Symbol VCES V.
IXYS Corporation
IXGA24N120C3 - GenX3 1200V IGBT
Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 VCES = IC25 .
IXYS Corporation
IXGH24N120C3 - GenX3 1200V IGBT
Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 VCES = IC25 .
IXYS Corporation
IXGP24N120C3 - GenX3 1200V IGBT
Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 VCES = IC25 .
ON Semiconductor
NTH4L014N120M3P - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching.