4N120 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge and ope

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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P Features • Typ. RDS(on) = 14 mW • Low Switching Losses (Typ.

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Preliminary Technical Information GenX3TM 1200V IGBT IXGR24N120C3D1 High speed PT IGBTs for 20-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) =

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2

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Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 VCES = IC25

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID2

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Preliminary Technical Information GenX3TM 1200V IGBT IXGH24N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) =

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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching

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Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 VCES = IC25

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Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 VCES = IC25

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Advance Technical Data www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 24N120Q2 IXFX 24N120Q2 VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω

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Advance Technical Data www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 24N120Q2 IXFX 24N120Q2 VDSS = 1200 V = 24 A ID25 RDS(on) = 0.65 Ω

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IGBT Optimized for switching up to 35 KHz Preliminary data sheet IXGA 14N120B IXGP 14N120B VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V Symbol VCES V

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IGBT Optimized for switching up to 35 KHz Preliminary data sheet IXGA 14N120B IXGP 14N120B VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V Symbol VCES V

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