IXTP1R4N120P Datasheet - IXYS

IXTP1R4N120P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 1.4 3.0 1.4 150 10 86 -55 +150 150 -55 +1.

IXTP1R4N120P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplie

IXTP1R4N120P Datasheet (368.80 KB)

IXTP1R4N120P Datasheet Preview — Preview of IXTP1R4N120P PDF

Datasheet Details

Part number:

IXTP1R4N120P

Manufacturer:

IXYS

File Size:

368.80 KB

Description:

Power mosfet.

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IXTP1R4N120P Power MOSFET IXYS

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