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IXTP1R6N50P, IXTY1R6N50P Power MOSFET

IXTP1R6N50P Description

PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intri.

IXTP1R6N50P Features

* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount

IXTP1R6N50P Applications

* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
* AC and DC Motor Drives BVDSS VGS = 0V, ID = 250A 500 V
*  Discharge Circiuts in Lasers, Spark VGS(th) VDS = VGS, ID = 25A 3.0 5.5 V Igniters, RF Generators
* High Voltage Pulse Power IGSS VG

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTP1R6N50P, IXTY1R6N50P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP1R6N50P, IXTY1R6N50P
Manufacturer
IXYS
File Size
719.63 KB
Datasheet
IXTY1R6N50P_IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP1R6N50P, IXTY1R6N50P.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS
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