IXTP1R6N50P Datasheet - IXYS

IXTP1R6N50P Power MOSFET

PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VDSS VDGR T VGSS VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD S FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°.

IXTP1R6N50P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies

IXTP1R6N50P Datasheet (719.63 KB)

IXTP1R6N50P Datasheet Preview — Preview of IXTP1R6N50P PDF

Datasheet Details

Part number:

IXTP1R6N50P

Manufacturer:

IXYS

File Size:

719.63 KB

Description:

Power mosfet.

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