IXTP1R6N100D2, IXTY1R6N100D2 Datasheet - IXYS Corporation

IXTP1R6N100D2 - N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 TO-252 (IXTY) G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 1000 V 20 V 30 V 100 W - 55 +150 C 150 C - 55 +150 C 300 °C 260 °C 1.13

IXTP1R6N100D2 Features

* Normally ON Mode

*  International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-Up Circuits

IXTY1R6N100D2_IXYSCorporation.pdf