IXTP1R4N60P, IXTU1R4N60P Datasheet - IXYS

IXTP1R4N60P - Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-.

IXTP1R4N60P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies

IXTU1R4N60P_IXYS.pdf