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IXTP1R4N60P, IXTU1R4N60P Power MOSFET

IXTP1R4N60P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.

IXTP1R4N60P Features

* International Standard Packages
* Low QG
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier Advantages
* High Power Density
* Easy to Mount

IXTP1R4N60P Applications

* DC-DC Converters
* Switch-Mode and Resonant-Mode Power Supplies
* AC and DC Motor Drives
*  Discharge Circiuts in Lasers, Spark Igniters, RF Generators
* High Voltage Pulse Power Applications DS99253F(6/17) IXTU1R4N60P Symbol Test Conditions (TJ = 25C, Unle

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTP1R4N60P, IXTU1R4N60P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP1R4N60P, IXTU1R4N60P
Manufacturer
IXYS
File Size
309.77 KB
Datasheet
IXTU1R4N60P_IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP1R4N60P, IXTU1R4N60P.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS
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