IXTP1R6N50D2 Datasheet - IXYS Corporation

IXTP1R6N50D2 N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 D G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings 500 V 20 V 30 V 100 W - 55 +150 C 150 C - 55 +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Condi.

IXTP1R6N50D2 Features

* Normally ON Mode

*  International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-up Circuits

IXTP1R6N50D2 Datasheet (348.50 KB)

IXTP1R6N50D2 Datasheet Preview — Preview of IXTP1R6N50D2 PDF

Datasheet Details

Part number:

IXTP1R6N50D2

Manufacturer:

IXYS Corporation

File Size:

348.50 KB

Description:

N-channel mosfet.

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IXTP1R6N50D2 N-Channel MOSFET IXYS Corporation

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