4N60A Datasheet | Specifications & PDF Download

ISA04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power VDSS 600

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Silicon N-Channel Power MOSFET CS4N60 A8HD ○R General Description： CS4N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE(sat) tfi = = = = 600 V 48 A 2.7 V 275 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25 °C to 150

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Silicon N-Channel Power MOSFET CS4N60 A3HD ○R General Description： CS4N60 A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.

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Advance Technical Information HiPerFASTTM IGBT Short Circuit SOA Capability IXSH24N60 IXSH24N60A VCES 600V 600V IC90 24A 24A VCE(sat) 2.2V 2.7V

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HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1 VCES 600 V 600 V IC25 VCE(sat) 48 A 2.2 V 48 A 2.7 V Symbol V

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Silicon N-Channel Power MOSFET CS4N60 A4HD ○R General Description： CS4N60 A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET ○R CS4N60 ARRD General Description： CS4N60 ARRD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX  

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Silicon N-Channel Power MOSFET CS4N60 A7HD ○R General Description： CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS4N60 A3TDY ○R General Description： CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX

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Silicon N-Channel Power MOSFET CS4N60 A3R ○R General Description： CS4N60 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal sili

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600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 20nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant

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Silicon N-Channel Power MOSFET ○R CS24N60ANR General Description： VDSS 600 V CS24N60 ANR, the silicon N-channel Enhanced ID 24 A VDMOSFETs,

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 3.3Ω ID 4A G UIS, 100% Tested S

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Silicon N-Channel Power MOSFET CS4N60 A4TDY ○R General Description： CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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