4N60A Datasheet | Specifications & PDF Download

ISA04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power VDSS 600

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Preliminary Technical Information GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR64N60A3* *Obsolete Part Number VCES = IC11

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SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal sili

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Silicon N-Channel Power MOSFET CS4N60 A4HD ○R General Description： CS4N60 A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET ○R CS24N60ANR General Description： VDSS 600 V CS24N60 ANR, the silicon N-channel Enhanced ID 24 A VDMOSFETs,

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600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 20nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant

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SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal sili

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GOFORD Features  600V, 4A  RDS(ON) = 2.0 Ω (Typ.) @ VGS = 10V  Fast switching  100% avalanche tested  Improved dv/dt capability  RoHS Compliant

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HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot

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Silicon N-Channel Power MOSFET CS4N60 A3TDY ○R General Description： CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Silicon N-Channel Power MOSFET CS4N60 A8HD ○R General Description： CS4N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Silicon N-Channel Power MOSFET CS4N60 A3R ○R General Description： CS4N60 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  Fast Switching  Pb-free lead plating; RoHS c

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Silicon N-Channel Power MOSFET CS4N60 A4TDY ○R General Description： CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Silicon N-Channel Power MOSFET CS4N60 A3HD ○R General Description： CS4N60 A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Silicon N-Channel Power MOSFET CS4N60 A7HD ○R General Description： CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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