4N60A Datasheet | Specifications & PDF Download

HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.

Rating: 1 ★ (6 votes)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal sili

Rating: 1 ★ (5 votes)

SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal sili

Rating: 1 ★ (5 votes)

ISA04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power VDSS 600

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot

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Silicon N-Channel Power MOSFET ○R CS24N60ANR General Description： VDSS 600 V CS24N60 ANR, the silicon N-channel Enhanced ID 24 A VDMOSFETs,

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600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 20nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant

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GOFORD Features  600V, 4A  RDS(ON) = 2.0 Ω (Typ.) @ VGS = 10V  Fast switching  100% avalanche tested  Improved dv/dt capability  RoHS Compliant

Rating: 1 ★ (4 votes)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

Rating: 1 ★ (3 votes)

Silicon N-Channel Power MOSFET CS4N60 A3TDY ○R General Description： CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

Rating: 1 ★ (3 votes)

HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE(sat) tfi = = = = 600 V 48 A 2.7 V 275 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25 °C to 150

Rating: 1 ★ (3 votes)

HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.

Rating: 1 ★ (3 votes)

GPT04N60A POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the

Rating: 1 ★ (3 votes)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 2.4Ω ID 4A G UIS, 100% Tested S

Rating: 1 ★ (2 votes)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 3.3Ω ID 4A G UIS, 100% Tested S

Rating: 1 ★ (2 votes)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX

Rating: 1 ★ (2 votes)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60A V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX

Rating: 1 ★ (2 votes)

Features  N-Channel，10V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  Fast Switching  Pb-free lead plating; RoHS c

Rating: 1 ★ (2 votes)

Rating: 1 ★ (2 votes)