5.9A Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB64

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Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929AHQ(Tentative) Maximum Power 47W BTL × 4-ch Audio Power IC TB2929AHQ 1. Description The T

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733-11-I Wuxi I-CORE Electronics Co., Ltd. ：AIP1629A-AX-BJ-113 AIP1629A LED ： 2011-12-A1 2011-12 / 100 9 2 http://www.i-core. cn

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KP1059AWPA 、、  500V MOSFET  600V  800V   、 VDD   ±4%     :  LED     HVDD  ASOP-7  LED KP1059AWP LED。 KP10

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INTEGRATED CIRCUITS LM139/239/239A/339/339A/LM2901/MC 3302 Quad voltage comparator Product specification IC11 Data Handbook 1995 Nov 27 Philips Semi

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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DP2539A High Precision CC/CV Primary-Side PWM Power Switch GENERAL DESCRIPTION DP2539A is a high performance offline PWM power switch for low power A

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XB8089A ______________________________________ ________________________________________________________________________________ One Cell Lithium-ion/P

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630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the sel

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AX88179A USB 3.2 Gen1 to Gigabit Ethernet Controller Features Single chip USB 3.2 Gen 1 to Gigabit Ethernet controller with Integrated 1G/100M/10M Ba

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UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR  FEATURES * VCEV = 80V * High Gain * 20 Amps pulse current  O

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High Performance CCFL Controller DF6109A —DF6109A （V1.0） z DF6109A ZVS （Zero Voltage Switch） LCD IC，，， 、、；， 、、LCD 、，、 。 z ‹ IC ：4.5V----18V ‹

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Features VDS (V) = -40V RDS(ON) 70m (VGS = 10V) ，ID = -4.4A RDS(ON) 95m (VGS = 4.5V) ，ID = -3.5A SI2319A SOT-23 Plastic-Encapsulate MOSFETS SOT–23 1

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ELM14429AA-VB ELM14429AA-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VG

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Production February 2003 ® P2779A Low-Cost Notebook EMI Reduction IC Features • • • • • • Provides up to 15 dB of EMI suppression FCC approved meth

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