50N15 Datasheet | Specifications & PDF Download

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 50N15 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V (Min) ·St

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 48A G UIS, Rg 100% Tested

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EMD50N15F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 150V RDSON (MAX.) 50mΩ

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15BRQ8 Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. :

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) ·Fast Swi

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N-Channel 150 V (D-S) MOSFET DTP150N15 www.din-tek.jp PRODUCT SUMMARY VDS (V) 150 RDS(on) () MAX. 0.0055 at VGS = 10 V ID (A) 150 Qg (TYP.) 57n

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HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 150N15 VDSS = 150 V ID25 = 150 A RDS(on) = 12.5 mW trr £ 250 ns Symbol Test C

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Advance Technical Information www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 150N15P IXFK 150N15P VDSS = 150 V

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CYStech Electronics Corp. Spec. No. : C957J3 Issued Date : 2016.07.26 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N

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X4-Class Power MOSFETTM Advance Technical Information IXTP150N15X4 IXTH150N15X4 VDSS = ID25 = RDS(on) 150V 150A 7.2m N-Channel Enhancement Mode

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X4-Class Power MOSFETTM Advance Technical Information IXTP150N15X4 IXTH150N15X4 VDSS = ID25 = RDS(on) 150V 150A 7.2m N-Channel Enhancement Mode

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X4-Class Power MOSFETTM Advance Technical Information IXTA150N15X4 IXTA150N15X4-7 N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15BRV8 Spec. No. : C033V8 Issued Date : 2017.08.21 Revised Date : 2020.02.25

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) ·Fast Swi

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die IXFR 150N15 V = 150 V DSS I

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 36A G UIS, Rg 100% Tested

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PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 V 150 A 13 m Ω TO-264 (IX

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TSM650N15CR Taiwan Semiconductor N-Channel Power MOSFET 150V, 24A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for f

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HGS750N15ML Feature ◇ High Speed Power Switching, logic level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested

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