50N15 Datasheet | Specifications & PDF Download

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 50N15 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V (Min) ·St

(27 views)

TSM650N15CR Taiwan Semiconductor N-Channel Power MOSFET 150V, 24A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for f

(15 views)

() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

(14 views)

N-Channel 150 V (D-S) MOSFET DTP150N15 www.din-tek.jp PRODUCT SUMMARY VDS (V) 150 RDS(on) () MAX. 0.0055 at VGS = 10 V ID (A) 150 Qg (TYP.) 57n

(13 views)

() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

(13 views)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 7A G UIS, Rg 100% Tested

(12 views)

CYStech Electronics Corp. Spec. No. : C979J3 Issued Date : 2014.08.14 Revised Date : 2015.03.02 Page No. : 1/9 N -Channel Enhancement Mode Power MOS

(12 views)

X4-Class Power MOSFETTM Advance Technical Information IXTP150N15X4 IXTH150N15X4 VDSS = ID25 = RDS(on) 150V 150A 7.2m N-Channel Enhancement Mode

(12 views)

RM50N150DF N-Channel Super Trench Power MOSFET Description The RM50N150DF uses Super Trench technology that is uniquely optimized to provide the mos

(11 views)

EMD50N15F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 150V RDSON (MAX.) 50mΩ

(10 views)

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15BRQ8 Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. :

(10 views)

RM50N150DF N-Channel Super Trench Power MOSFET Description The RM50N150DF uses Super Trench technology that is uniquely optimized to provide the mos

(10 views)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 48A G UIS, Rg 100% Tested

(9 views)

Features  N-Channel，10V Logic level control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on)  100% Avalanche test  Pb-free lead

(9 views)

PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 V 150 A 13 m Ω TO-264 (IX

(9 views)

Advance Technical Information www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 150N15P IXFK 150N15P VDSS = 150 V

(9 views)

Advance Technical Information www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 150N15P IXFK 150N15P VDSS = 150 V

(9 views)

X4-Class Power MOSFETTM Advance Technical Information IXTA150N15X4 IXTA150N15X4-7 N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS

(9 views)

Features  N-Channel，10V Logic level control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on)  100% Avalanche test  Pb-free lead

(8 views)

Features  N-Channel，10V Logic level control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on)  100% Avalanche test  Pb-free lead

(8 views)