isc N-Channel Mosfet Transistor INCHANGE Semicond.
50N15 - N-Channel MOSFET
isc N-Channel Mosfet Transistor INCHANGE Semiconductor 50N15 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V (Min) ·St.EMD50N15G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 7A G UIS, Rg 100% Tested .EMD50N15E - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 48A G UIS, Rg 100% Tested .EMD50N15F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMD50N15F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 150V RDSON (MAX.) 50mΩ .IXFR150N15 - Power MOSFET
Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die IXFR 150N15 V = 150 V DSS I.BSB150N15NZ3 - n-Channel Power MOSFET
n-Channel Power MOSFET OptiMOS™ BSB150N15NZ3 Data Sheet 2.3, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB150N15NZ3 G 1 Descri.EMD50N15A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 36A G UIS, Rg 100% Tested .MTA50N15H8 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N.MTA50N15J3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C957J3 Issued Date : 2016.07.26 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N.MTB050N15J3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C979J3 Issued Date : 2014.08.14 Revised Date : 2015.03.02 Page No. : 1/9 N -Channel Enhancement Mode Power MOS.CRTS150N15N - Trench N-MOSFET
() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according .VST050N15HS - N-Channel Advanced Power MOSFET
Features N-Channel,10V Logic level control Enhancement mode Fast Switching Very low on-resistance RDS(on) 100% Avalanche test Pb-free lead.VSD050N15HS - N-Channel Advanced Power MOSFET
Features N-Channel,10V Logic level control Enhancement mode Fast Switching Very low on-resistance RDS(on) 100% Avalanche test Pb-free lead.VSP050N15HS - N-Channel Advanced Power MOSFET
Features N-Channel,10V Logic level control Enhancement mode Fast Switching Very low on-resistance RDS(on) 100% Avalanche test Pb-free lead.MSL650N15G - N-Channel Enhancement Mode MOSFET
Chip Integration Technology Corporation MSL650N15G N-Channel Enhancement Mode MOSFET ■ Features • 150V/5A RDS(ON) = 65mΩ (max.) @ VGS= 10V RDS(ON) =.DTP150N15 - N-Channel MOSFET
N-Channel 150 V (D-S) MOSFET DTP150N15 www.din-tek.jp PRODUCT SUMMARY VDS (V) 150 RDS(on) () MAX. 0.0055 at VGS = 10 V ID (A) 150 Qg (TYP.) 57n.IXFN150N15 - Power MOSFET
HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 150N15 VDSS = 150 V ID25 = 150 A RDS(on) = 12.5 mW trr £ 250 ns Symbol Test C.IXFK150N15 - HiPerFET Power MOSFETs
www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD.IXFX150N15 - HiPerFET Power MOSFETs
www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD.IXTQ150N15P - Power MOSFET
PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 V 150 A 13 m Ω TO-264 (IX.