IXFH150N15P, IXFK150N15P Datasheet - IXYS Corporation

IXFH150N15P Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A RDS(on) ≤ 13 mΩ TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width l.

IXFH150N15P Features

* z z Maximum Ratings 150 150 ± 20 ± 30 150 75 340 60 80 2.5 10 V V G V V A A A A mJ J V/ns G D D S (TAB) TO-264(SP) (IXTK) D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.13/10 Nm/lb.in. 5.5 10 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low packag

IXFK150N15P_IXYSCorporation.pdf