IXFH150N17T Datasheet (IXYS Corporation)

IXFH150N17T, Power MOSFET

TrenchHVTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFH150N17T VDSS ID25 RDS(on) = 175V = 150A ≤ 12mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 175 175 ± 30 150 75 400 75 1.5 15 830 -55 +17

IXFH150N17T Features

* z z International standard package Avalanche rated z 175°C Operating Temperature z High current handling capability 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 Easy to mount Space savings High power density Applications Symbol Test Conditio