Datasheet Specifications
- Part number
- IXFH150N17T
- Manufacturer
- IXYS Corporation
- File Size
- 174.54 KB
- Datasheet
- IXFH150N17T_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
TrenchHVTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFH150N17T VDSS ID25 RDS(on) = 175V = 150A ≤ 12mΩ TO-247 Symbol V.
Applications
* Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C 250 10 VGS = 10V, ID = 0.5IXFH150N17T Distributors
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