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IXFH15N100Q, IXFT15N100Q Datasheet - IXYS Corporation

IXFH15N100Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width.

IXFH15N100Q Features

* z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability classification z Low RDS (on) low Qg z Avalanche energy and current rated z Fast intrinsic rectifier Advantages z Easy to mount z Space savings z High power density © 2001 IXYS All rights reserved

IXFT15N100Q_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFH15N100Q, IXFT15N100Q. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXFH15N100Q, IXFT15N100Q

Manufacturer:

IXYS Corporation

File Size:

190.84 KB

Description:

Hiperfet power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFH15N100Q, IXFT15N100Q.
Please refer to the document for exact specifications by model.

IXFH15N100Q Distributor

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IXFH15N100Q IXFT15N100Q HiPerFET Power MOSFETs IXYS Corporation