IXFH15N80 Datasheet - IXYS Corporation

IXFH15N80, Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 800 V .

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IXFH15N80_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH15N80

Manufacturer:

IXYS Corporation

File Size:

100.00 KB

Description:

Power MOSFET

Features

* 300 -55 +150 150 -55 +150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier

Applications

* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 4 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 25°C TJ = 125°C Characte

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IXFH15N80 Power MOSFET IXYS Corporation

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