* G = Gate S = Source S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, I
IXFH15N80Q Datasheet (111.91 KB)
IXFH15N80Q
IXYS Corporation
111.91 KB
Hiperfet power mosfets.
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 15N80Q IXFT 15N80Q
VDSS ID25 RDS(on)
= = =
80.
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