IXFH15N80Q Datasheet - IXYS Corporation

IXFH15N80Q HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS(on) = = = 800 V 15 A 0.60 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C .

IXFH15N80Q Features

* G = Gate S = Source S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, I

IXFH15N80Q_IXYSCorporation.pdf