IXFH15N100Q3 Datasheet - IXYS Corporation

IXFH15N100Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting .

IXFH15N100Q3 Features

* Low Intrinsic Gate Resistance

* International Standard Packages

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Battery Chargers

IXFH15N100Q3_IXYSCorporation.pdf

IXFH15N100Q3 Datasheet Preview — Preview of IXFH15N100Q3 PDF

Datasheet Details

Part number:

IXFH15N100Q3

Manufacturer:

IXYS Corporation

File Size:

850.49 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFH15N100Q HiPerFET Power MOSFETs (IXYS Corporation)

IXFH15N100 HiPerFET Power MOSFETs (IXYS)

IXFH15N100P Power MOSFET (IXYS Corporation)

IXFH15N60 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)

IXFH15N60 Power MOSFET (IXYS Corporation)

IXFH15N65 Power MOSFET (IXYS Corporation)

IXFH15N80 Power MOSFET (IXYS Corporation)

IXFH15N80Q HiPerFET Power MOSFETs (IXYS Corporation)

TAGS

IXFH15N100Q3 IXFH15N100Q3 Power MOSFET IXYS Corporation

IXFH15N100Q3 Distributor