IXFH150N17T2 Power MOSFET

IXYS Corporation

Description

Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH150N17T2 IXFT15.

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Datasheet Specifications

Part number: IXFH150N17T2
Manufacturer: IXYS Corporation
File Size: 197.69 KB
Datasheet: IXFH150N17T2_IXYSCorporation.pdf
Description: Power MOSFET

Features

* z z Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 z z z High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Other

Applications

* z z z 10 μA 1.5 mA 9.7 12.0 mΩ z z z z VGS = 10V, ID = 0.5
* ID25, Note 1 DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications www. DataSheet4U. net © 2010 IXYS CO

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IXFH150N17T2 Power MOSFET IXYS Corporation

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