IXFH150N17T2 Datasheet - IXYS Corporation

IXFH150N17T2 Power MOSFET

Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH150N17T2 IXFT150N17T2 VDSS ID25 RDS(on) trr = = ≤ ≤ 175V 150A 12.0mΩ 160ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C.

IXFH150N17T2 Features

* z z Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 z z z High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Other

IXFH150N17T2_IXYSCorporation.pdf