IXFN150N15 Datasheet - IXYS

IXFN150N15 Power MOSFET

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 150N15 VDSS = 150 V ID25 = 150 A RDS(on) = 12.5 mW trr £ 250 ns Symbol Test Conditions V DSS VDGR V GS V GSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md T = 25°C to 150°C J TJ = 25°C to 150°C, RGS = 1MW Continuous Transient TC = 25°C Terminal (current limit) TC = 25°C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.063 in) from case f.

IXFN150N15-IXYS.pdf