Datasheet Specifications
- Part number
- IXFN150N10
- Manufacturer
- IXYS Corporation
- File Size
- 115.93 KB
- Datasheet
- IXFN150N10_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V.
Features
* International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier qApplications
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays q q q q q q q VGS = 10 V, ID = 75 A Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages Easy to mount Space savings High powIXFN150N10 Distributors
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