50N30 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal

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RM50N30DN Description RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance a

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR

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RM50N30DN Description RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance a

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FGPF50N30T 300V, 50A PDP IGBT January 2008 FGPF50N30T 300V, 50A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.4V

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Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·Fast Swi

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Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ

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SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR

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Main Product Characteristics: VDSS RDS(on) 300V 45mΩ(typ.) ID 50A ① Features and Benefits: TO-247  Advanced MOSFET process technology  Special

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