logo

50N30 Datasheet, Features, Application

50N30 N-Channel Power MOSFET

SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET.

Fairchild Semiconductor

FGPF50N30T - 50A PDP IGBT

FGPF50N30T 300V, 50A PDP IGBT January 2008 FGPF50N30T 300V, 50A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.4V.
1.0 · rating-1
nELL

50N30 - N-Channel Power MOSFET

SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal .
1.0 · rating-1
nELL

50N30C - N-Channel Power MOSFET

SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal .
1.0 · rating-1
Silikron Semiconductor

SSPL50N30H - N-Channel enhancement mode power field effect transistors

Main Product Characteristics: VDSS RDS(on) 300V 45mΩ(typ.) ID 50A ① Features and Benefits: TO-247  Advanced MOSFET process technology  Special.
1.0 · rating-1
Rectron

50N30 - N-Channel Super Trench Power MOSFET

RM50N30DN Description RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance a.
1.0 · rating-1
IXYS

IXFT50N30Q3 - Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR .
1.0 · rating-1
IXYS

IXFH50N30Q3 - Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR .
1.0 · rating-1
IXYS

IXTT50N30 - Power MOSFET

Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ .
1.0 · rating-1
IXYS

IXTH50N30 - Power MOSFET

Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ .
1.0 · rating-1
INCHANGE

IXTH50N30 - N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·Fast Swi.
1.0 · rating-1
Rectron

RM50N30DN - N-Channel Super Trench Power MOSFET

RM50N30DN Description RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance a.
1.0 · rating-1
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts