512-Mbit Datasheet | Specifications & PDF Download

www.datasheet4u.com April 2007 HYB25DC512800B[E/F] HYB25DC512160B[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products Internet

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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M29F040B 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OP

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 /

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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M27C4001 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active

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CY7C1062DV33 16 Mbit (512 K × 32) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low complementary metal

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M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo

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September 2006 HYB25D512[40/80/16]0B[C/T](L) HYB25D512[40/80/16]0B[E/F](L) 512-Mbit Double-Data-Rate SDRAM DDR SDRAM Internet Data Sheet Rev. 1.63 HY

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M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – V

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M68Z512 4 Mbit (512Kb x8) Low Power SRAM with Output Enable s ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max) s s s s s s s OPERATI

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

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K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND

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HY5RS123235BFP 512Mbit (16Mx32) GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hy

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M48Z512A M48Z512AY, M48Z512AV 4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, pow

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M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM,

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M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V

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