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Toshiba
TC58FVB800 - 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY
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Infineon
HYB25DC512160CF - 512-Mbit Double-Data-Rate SDRAM
www.DataSheet4U.com D a t a S h e e t , Rev. 1.10, O c t . 2 0 0 5 HYB25DC512800C[E/F] HYB25DC512160C[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM.
STMicroelectronics
29F040 - 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory
M29F040 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo.
AMD
AM41PDS3224D - Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
Am41PDS3224D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG ).
STMicroelectronics
NAND01G-N - 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package
www.DataSheet4U.com NAND01G-N 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA .
Chingis Technology
Pm25LD010 - 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single.
Chingis Technology
Pm25LD020 - 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single.
Hynix Semiconductor
H55S5122EFR - 512Mbit (16Mx32bit) Mobile SDR Memory
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
Cypress Semiconductor
CY14E116N - 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
PRELIMINARY CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048 K × 8/1024 K × 16/512 K × 32) nvSRAM Features 16-Mbit nonvolat.
STMicroelectronics
M27C405 - 4 Mbit 512Kb x 8 OTP EPROM
M27C405 4 Mbit (512Kb x 8) OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION PIN COMPATIBLE with the 4 Mbit, SINGLE VOLTAGE FLASH MEMORY FAST ACCESS.
Hynix Semiconductor
HY29LV800T-70I - 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.
Samsung semiconductor
K4R881869 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9.
ST Microelectronics
M50FW040 - 4 Mbit 512Kb x8/ Uniform Block 3V Supply Firmware Hub Flash Memory
M50FW040 4 Mbit (512Kb x8, Uniform Block) 3V Supply Firmware Hub Flash Memory s SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operati.
ST Microelectronics
M29F800AB - 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory
M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, .
ST Microelectronics
M29W004BB - 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and R.
ST Microelectronics
M48T513V - 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM
M48T513Y M48T513V 3.3V-5V 4 Mbit (512Kb x8) TIMEKEEPER® SRAM s INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY,.
ST Microelectronics
M29W800T - 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
M29W800T M29W800B 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W800T and M29W800B are replac.
STMicroelectronics
29W040 - 4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
M29W040 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W040 is replaced by the M29W040B 2.7V to 3.6V S.
Integrated Circuit Systems
IC42S32200L - 512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S32200 IC42S32200L Document Title 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM Revision History www.datasheet4u.com Revision No History Initial Draf.
Elite Semiconductor Memory Technology
M24L48512SA - 4-Mbit (512K x 8) Pseudo Static RAM
ESMT PSRAM www.DataSheet4U.com M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55 .