Global Mixed-mode Technology
G5616A - Complete DDR / DDRII and DDRIII Memory Solution Synchronous Buck PWM Controller
Global Mixed-mode Technology
G5616A
Complete DDR, DDRII and DDRIII Memory Solution
Synchronous Buck PWM Controller, 2A LDO,
Buffered Reference
Fe
Rating:
1
★
(12 votes)
Global Mixed-mode Technology
G5616 - Complete DDR / DDRII and DDRIII Memory Solution Synchronous Buck PWM Controller
Global Mixed-mode Technology
G5616
Complete DDR, DDRII and DDRIII Memory Solution
Synchronous Buck PWM Controller, 3A LDO,
Buffered Reference
Fea
Rating:
1
★
(7 votes)
Samsung
K4H561638D-TCB0 - 128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
Rating:
1
★
(6 votes)
Samsung semiconductor
K4H561638F - 256Mb F-die DDR SDRAM Specification
DDR SDRAM 256Mb F-die (x8, x16)
DDR SDRAM
256Mb F-die DDR SDRAM Specification Revision 1.3 October, 2004
Rev. 1.3 October, 2004
DDR SDRAM 256Mb F-
Rating:
1
★
(6 votes)
Allegro MicroSystems
5616 - 4-DIGIT LCD AUTOMOTIVE CLOCK-PROGRAMMABLE
www.DataSheet4U.com
5616
2-FUNCTION, 4-DIGIT LCD AUTOMOTIVE CLOCK
5616
Data Sheet 26110
2-FUNCTION, 4-DIGIT LCD AUTOMOTIVE CLOCK—PROGRAMMABLE
The
Rating:
1
★
(6 votes)
Samsung semiconductor
KFG5616x1A-xxB5 - OneNAND Specification FLASH MEMORY
OneNAND256(KFG5616x1A-xxB5)
FLASH MEMORY www.DataSheet4U.com
OneNANDTM Specification
Density
Part No. KFG5616Q1A-DEB5 KFG5616Q1A-PEB5 KFG5616D1A-D
Rating:
1
★
(6 votes)
Samsung semiconductor
K4S561632J - 256Mb J-die SDRAM Specification
K4S560432J K4S560832J K4S561632J
Synchronous DRAM
256Mb J-die SDRAM Specification
54 TSOP-II with Lead-Free & Halogen-Free
(RoHS compliant)
INFORMA
Rating:
1
★
(6 votes)
PTC
PT5616 - 3-Phase 600V Gate Driver
DESCRIPTION
The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking volt
Rating:
1
★
(6 votes)
STMicroelectronics
BCP5616 - Low power NPN Transistor
www.DataSheet4U.com
BCP56-16
Low power NPN Transistor
General features
■ Silicon epitaxial planar NPN medium voltage transistor
■ SOT-223 plastic pa
Rating:
1
★
(5 votes)
Infineon
HYB25D256160CT - 256 Mbit Double Data Rate SDRAM
D a t a S h e e t , Rev. 1.2, A p r . 2 00 4
HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F]
256 Mbit Double Data Rate SDRAM
Memory Products
Ne
Rating:
1
★
(5 votes)
Infineon Technologies AG
HYB18RL25616AC - 256 Mbit DDR Reduced Latency DRAM
HYB18RL25632AC HYB18RL25616AC
Graphics & Speciality DRAMs
256 Mbit DDR Reduced Latency DRAM
Version 1.60 July 2003
HYB18RL25616/32AC 256 Mbit DDR R
Rating:
1
★
(5 votes)
Samsung semiconductor
K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed addr
Rating:
1
★
(5 votes)
Samsung semiconductor
K4S56163PF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba
Rating:
1
★
(5 votes)
Samsung semiconductor
K9F5616U0C - NAND Flash Memory
K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision
Rating:
1
★
(5 votes)
Samsung
K4H561638C-TLA0 - 128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
Rating:
1
★
(5 votes)
Samsung
K4H561638D-TCA2 - 128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
Rating:
1
★
(5 votes)
Samsung
K4H561638E-TCA2 - 128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
Rating:
1
★
(5 votes)
Samsung
K4M56163PE-F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163PE - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba
Rating:
1
★
(5 votes)
Samsung semiconductor
K4M56163PG - 4M x 16Bit x 4 Banks Mobile SDRAM
www.DataSheet4U.com
K4M56163PG - R(B)E/G/C/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multi
Rating:
1
★
(5 votes)
Samsung semiconductor
K4X56163PI-LE - 16Mx16 Mobile DDR SDRAM
K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle •
Rating:
1
★
(5 votes)