INCHANGE Semiconductor isc N-Channel MOSFET Transi.
Fairchild Semiconductor
FQP5N30 - 300V N-Channel MOSFET
QFET % % % % % % & '( )**+ , - * .Ω /+ - 0* + 1 2 . 3 4 1 2 . &.
IXYS Corporation
IXGF25N300 - High Voltage IGBT
High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF25N300 VCES = 3000V IC25 = 27A VCE(sat) ≤ 3.0V Symbol VCES .
Renesas
5N3011P - N-Channel MOSFET
H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P.
IXYS Corporation
IXFH35N30 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .
Renesas Technology
H5N3005LD - Silicon N Channel MOS FET High Speed Power Switching
H5N3005LD, H5N3005LS, H5N3005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1315-0400 Rev.4.00 Nov 08, 2005 Features • Low on-resistan.
Renesas Technology
H5N3005LM - Silicon N Channel MOS FET High Speed Power Switching
H5N3005LD, H5N3005LS, H5N3005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1315-0400 Rev.4.00 Nov 08, 2005 Features • Low on-resistan.
Renesas Technology
H5N3008P - Silicon N Channel MOS FET High Speed Power Switching
H5N3008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0539-0300 Rev.3.00 Oct 16, 2006 Features • Low on-resistance • Low leakage curren.
IXYS Corporation
IXFH35N30 - Power MOSFET
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30 IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 .
ETC
45N30A - CRYSTAL FILTERS
45MHZ SERIES MCF s Features 8 Compactness and light weight 8 Excellent design against shock/vibration 8 Low impedance s 45MHz Fundamental Model 45S1.
RFE
JVR05N301K65 - METAL OXIDE VARISTOR
METAL OXIDE VARISTOR MOV - 5mm Disc RoHS ü HOW TO SELECT METAL OXIDE VARISTORS • What is the range of ACrms or DC Voltage in the application? • Ho.
INCHANGE
IXTH35N30 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) ·Fast Sw.
IXYS
IXTK75N30 - Power MOSFET
Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 75N30 VDSS = ID25 = = RDS(on) 300 V 75 A 42 mΩ Symbol .
IXYS
IXBF55N300 - Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat) 3000V 34A 3.2V (Electrically Isolated Ta.
IXYS
IXBX55N300 - Monolithic Bipolar MOS Transistor
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) .
IXYS
IXBK55N300 - Monolithic Bipolar MOS Transistor
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) .
GME
BL15N30F - N-Channel Power MOSFET
N-Channel Power MOSFET FEATURES RDS(on) = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A Low Gate Charge (Typ. 28 nC) Low Crss (Typ. 17 pF) 100% Aval.