64-Channel Datasheet | Specifications & PDF Download

AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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CO 10 Q o. w CO 10 QCO Qz. CO 10 CO Q Q. CO CO lO zlO CM IO CO IO zIO CM Tf CO 10 zIO CM Process 96 2N5564-66/NPD5564-66 N-Channel Monolithic Dual J

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AON6414A 30V N-Channel MOSFET General Description Product Summary The AON6414A uses advanced trench technology to provide excellent RDS(ON), low ga

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CEA6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.6A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. High dense cel

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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a FEATURES 64 Position Replaces Four Potentiometers 10 k⍀ , 100 k ⍀ Power Shutdown—Less than 5 ␮ A 3-Wire SPI-Compatible Serial Data Input 10 MHz Upda

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RT9643 5 Channel ACPI Regulator with Step-Down DC/DC Controller General Description The RT9643 is a combo regulator which is compliant to ACPI specifi

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N-Channel 40 V (D-S) MOSFET DTQ6404 www.din-tek.jp PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.0047 at VGS = 10 V 0.006 at VGS = 4.5 V ID (A)a, e 70

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Preliminary Data Sheet, DS3, July 2003 DuSLIC Dual Channel Subscriber Line Interface Concept PEB 3264, Version 1.4 PEB 3265, Version 1.5 PEB 4264/-2,

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Features • maXTouch™ Touchscreen – Two touchscreens with true 12-bit multiple touch reporting and real-time XY tracking for up to 16 concurrent touche

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P6402FMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 64mΩ @VGS = -4.5V ID -4A SOT-23 ABSOLUTE MAXIMUM

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DATA SHEET www.onsemi.com MOSFET - Power, N-Channel, Logic Level 100 V, 23 A, 56 mW NTD6415ANL, NVD6415ANL V(BR)DSS 100 V RDS(on) MAX 56 mW @ 4.5 V

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Preliminary Data Sheet, DS3, July 2003 DuSLIC Dual Channel Subscriber Line Interface Concept PEB 3264, Version 1.4 PEB 3265, Version 1.5 PEB 4264/-2,

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MT3264 40V, 80A, 5.5m: R DS(on) = 5.5m : ( Typ.)@ VGS= 10V, ID= 15A 40 80 240 190 MT3264 MT3264 TO-220FB-3L MT3264 50 40 32 1 32 30 1 1.7

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P6403FMG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 64mΩ @VGS = -4.5V ID -3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA

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MAX22663–MAX22666 Reinforced, Fast, Low-Power, Six-Channel Digital Isolators Product Highlights • AEC-Q100 Qualification for /V Devices • Reinforced

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U U FEATURES ■ 16-Bit 150ksps ADCs in MSOP Package ■ Single 3V Supply ■ Low Supply Current: 450µA (Typ) ■ Auto Shutdown Reduces Supply Current to 10µ

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N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC Package    UPS APP

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NEW PRODUCT AP3064 FOUR-CHANNEL CURRENT SOURCE BOOST LED DRIVER Description The AP3064 is a high efficiency boost controller with 4-string current s

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BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling

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