64-Channel Datasheet | Specifications & PDF Download

AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 80 V, 64 A, 6.8 mW FDMC007N08LCDC General Description This N-Channel MV MOSFET is produced using onse

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640A FEATURES ·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitan

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a FEATURES 64 Position Replaces Four Potentiometers 10 k⍀ , 100 k ⍀ Power Shutdown—Less than 5 ␮ A 3-Wire SPI-Compatible Serial Data Input 10 MHz Upda

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CO 10 Q o. w CO 10 QCO Qz. CO 10 CO Q Q. CO CO lO zlO CM IO CO IO zIO CM Tf CO 10 zIO CM Process 96 2N5564-66/NPD5564-66 N-Channel Monolithic Dual J

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Dual Channel Fixed Voltage ULDO Linear Regulator TJ5641 FEATURES • Dual Channel Ultra Low Dropout Voltage • Compatible with low ESR MLCC as Input /

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI FEATURES ·Low RDS(on) = 0.180Ω(TYP) ·Lower Input Capacita

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Silan Microelectronics SVD640T/D/S_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/S is an N-channel enhancement mode power MOS

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IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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iscN-Channel MOSFET Transistor 2SK3564，I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0

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PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resista

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IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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P6402FMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 64mΩ @VGS = -4.5V ID -4A SOT-23 ABSOLUTE MAXIMUM

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3664 is a switching device, w

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RT9643 5 Channel ACPI Regulator with Step-Down DC/DC Controller General Description The RT9643 is a combo regulator which is compliant to ACPI specifi

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R N N-CHANNEL MOSFET JCS640 MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 18.0 A 200 V 0.18Ω 47 nC APPLICATIONS z Hig

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N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC Package    UPS APP

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LED1642GW 16 channel LED driver with error detection current gain control and 12/16-bit PWM brightness control Datasheet - production data QSOP-24

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N-Channel Trench Power MOSFET CS64N90\CSN64N90 General Description The CS64N90 is N-channel MOS Field Effect Transistor designed for high current sw

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