6GHz Datasheet | Specifications & PDF Download

SP5055 2.6GHz Bidirectional I2C BUS Controlled Synthesiser Supersedes version in April 1994 Consumer IC Handbook, HB3120 - 2.0 DS2384 - 4.4 May 1996

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CHA5050-99F 17-26GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5050-99F is a four stage monolithic MPA that provides typi

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OPA657 OPA 657 SBOS197B – DECEMBER 2001 – REVISED MAY 2004 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES q q q q q HIGH GAIN BANDWIDTH

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BFG93A; BFG93A/X NPN 6 GHz wideband transistors Rev. 05 — 26 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2

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m o .c 4U 2.5V / 3.3V tMultilevel Input to e Differential e LVPECL/LVNECL h Clock or S Data a t Receiver/Driver/Translator a Buffer .D w The NB6L16 is

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Data Sheet FEATURES Power conversion gain of 1.6 dB Wideband RF, LO, and IF ports SSB noise figure of 11 dB Input IP3 of 28 dBm Input P1dB of 12 dBm T

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NXP Semiconductors Technical Data 3.6 GHz Low Power Amplifier Module High Efficiency Pre--Driver The AFLP5G35645 is an integrated multi--chip module

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Data Sheet ADATE324 1.6 GHz Quad Integrated DCL with VHH Drive Capability, Level Setting DACs, and On-Chip Calibration Registers FEATURES GENERAL

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www.DataSheet4U.com PC/104-PLUS Intel® Core™2 Duo / Core™Duo / Core™Solo: 1.0GHz - 2.16GHz Features • Intel® Core™2 Duo / Core™Duo / Core™Solo • • •

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T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio co

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Mitsubishi Semiconductors MGFS38E3336-01 Specifications are subject to change without notice. 3.3 - 3.6GHz HBT MMIC MODULE Outline Drawing DESCRIPT

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CHR3352-QEG 12-16GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD leadless package Description The CHR3352-QEG is a multifunction

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Features n LTC6947 Ultralow Noise 0.35GHz to 6GHz Fractional-N Synthesizer Description The LTC®6947 is a high performance, low noise, 6GHz phase-lock

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FEATURES nn 300MHz to 6GHz Operating Frequency nn Wide IF Bandwidth: DC to 1GHz (–1dB Bandwidth) nn High Mixer IIP3: 30dBm at 1.9GHz nn High Total OIP

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MwT-7F 26 GHz Medium Power GaAs FET Features: • 21 dBm Output Power at 12 GHz • 15 dB Small Signal Gain at 12 GHz • Excellent for High Linear Gain or

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CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The

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Excelics DATA SHEET Features • • • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE +36dBm TYPICAL OUTPUT POWER 13.0dB TYPICAL POWER GAIN AT 2GHz 0.5dB TYPI

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CHT4012a98F RoHS COMPLIANT DC-6GHz 6-BIT DIGITAL ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4012a98F is a DC-6GHz monolithic 6 bit di

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DATA SHEET AS225-313LF: PHEMT GaAs IC 1 W Low-Loss 0.1 to 6 GHz SPDT Switch Applications  WLAN 802.11a/b/g Features  Positive low voltage control (

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LMK01000 www.ti.com SNAS437G – FEBRUARY 2008 – REVISED OCTOBER 2009 LMK01000 Family LMK01000 Family 1.6 GHz High Performance Clock Buffer, Divider,

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