6GHz Datasheet | Specifications & PDF Download

User Manual PD F w C ww re .nu at an e ce. 8 com Tr ia ECU-1871 Intel® AtomTM D510 1.66GHz Automation Computer with 2 x LAN, 3 x COM, 1 x IRIG-B a

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MwT-7F 26 GHz Medium Power GaAs FET Features: • 21 dBm Output Power at 12 GHz • 15 dB Small Signal Gain at 12 GHz • Excellent for High Linear Gain or

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Excelics DATA SHEET Features • • • • • • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE +33dBm TYPICAL OUTPUT POWER 14.0dB TYPICAL POWER GAIN AT 2GHz 0.4d

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OPA657 OPA 657 SBOS197B – DECEMBER 2001 – REVISED MAY 2004 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES q q q q q HIGH GAIN BANDWIDTH

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LX5506B TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ Advanced InGaP HBT ƒ Single-Polarity Voltage Su

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LX5506E I N T E G R A T E D P R O D U C T S InGaP HBT 4 – 6GHz Power Amplifier P RELIMINARY D ATA S HEET DESCRIPTION KEY FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ

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RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G

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T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio co

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CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6664-QDG is a thr

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TGS2355-SM 0.5-6 GHz 100 Watt GaN Switch Applications • • • • • • Commercial and Military Radar Communications Electronic Warfare Test Instruments Gen

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Features n 1.6GHz –3dB Small Signal Bandwidth n Low Distortion Driving 50Ω Load, 2.4VP-P Out –100dBc/–69dBc HD2/HD3 at 140MHz –80dBc IM3 and 46d

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CHX1094 12-36GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX1094 is a cascadable frequency multiplier by 3 monolithic circui

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CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The

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CHA5042 13–16GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5042 is a three-stage pHEMT HPA MMIC designed for VSAT ground t

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CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5093 is a high gain three-stage monolithic high power amplifie

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CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The packaged monolithic microwave IC (MMIC

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CHA6042 13–16GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6042 is a four-stage pHEMT HPA MMIC designed for VSAT ground te

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BFG93A; BFG93A/X NPN 6 GHz wideband transistors Rev. 05 — 26 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2

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AC602020 50MHz to 6GHz Gain Block MMIC Amplifier Features Operating Frequency 50MHz to 6GHz 18dB Gain at 2.0GHz 22dBm P1dB at 2.0GHz 32dBm OIP3 at 2.

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D602 3V, 6GHz Divide-by-2 Static Prescaler Final Applications 5GHz WLAN, IEEE 802.11a and HIPERLAN VSAT at 3.6 to 4.2 GHz Satellite Communications at

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