6N60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max) ·Fast Sw

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Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data IXSH 16N60U1 VCES IC25 VCE(sat)typ = 600V = 16A = 1.8V Symbol Test Cond

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 6

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HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns

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6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalan

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HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data V DSS

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NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested •

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HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data V DSS

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Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Symbol www

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NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices

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Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode A

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A R

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Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preli

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DataSheet.in FQP6N60 April 2000 QFET FQP6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transist

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NTP6N60, NTB6N60 Preferred Device Advance Information Power MOSFET 6 Amps, 600 Volts N–Channel TO–220 and D2PAK Designed for high voltage, high spee

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SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-termin

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V =

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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