6N60-C Datasheet | Specifications & PDF Download

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous g

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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I06N60T-VB I06N60T-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalan

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage

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DataSheet.in FQP6N60 April 2000 QFET FQP6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transist

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SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-termin

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 6

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Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data IXSH 16N60U1 VCES IC25 VCE(sat)typ = 600V = 16A = 1.8V Symbol Test Cond

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HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data V DSS

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MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology,

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FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on) = 0.2

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V =

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max) ·Fast Sw

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WML26N60C2, WMK26N60C2 WMN26N60C2, WMM26N60C2, WMJ26N60C2 600V 0.16Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation supe

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HiPerFASTTM IGBTs C2-Class High Speed w/ Diode IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 3.0V 33ns T

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FQD6N60C 600V N-Channel MOSFET QFET FQD6N60C 600V N-Channel MOSFET Features • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V • Low gate charge ( typical 16

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MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 s s s s s V DSS 600 V R DS( on) < 1.2 Ω ID 6.8 A TYPICAL RDS(on) = 1 Ω AVAL

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