6N60B Datasheet | Specifications & PDF Download

Advance Technical Information GenX3TM 600V IGBT IXGH56N60B3* *Obsolete Part Number VCES = IC110 = VCE(sat) ≤ 600V 56A 1.80V Medium-Speed Low Vsat

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Advance Technical Information GenX3TM 600V IGBT IXGH36N60B3 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching VCES = IC110 = VCE(sat) ≤ 60

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GenX3TM 600V IGBT w/ Diode IXGH36N60B3D1 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching VCES = IC110 = VCE(sat) ≤ 600V 36A 1.8V TO-247

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HiPerFASTTM IGBTs B2-Class High Speed IXGA16N60B2 IXGP16N60B2 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol VCE

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HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns

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IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM

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6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalan

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HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns

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www.DataSheet4U.com IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Pre

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APT106N60B2C6 600V 106A 0.035Ω C O OLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance www.DataSheet4U.net

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MDF6N60B N-channel MOSFET 600V MDF6N60B N-Channel MOSFET 600V, 6A, 1.45Ω General Description The MDF6N60B uses advanced MagnaChip’s MOSFET Technolog

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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switc

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HiPerFASTTM IGBTs B2-Class High Speed IXGA16N60B2 IXGP16N60B2 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol VCE

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HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns

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www.DataSheet4U.com IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Pre

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MDI6N60B N-channel MOSFET 600V MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45Ω General Description The MDI6N60B uses advanced MagnaChip’s MOSFET Technol

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