6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FE.
CHONGQING PINGYANG
6N60B - N-CHANNEL MOSFET
6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalan.
IXYS Corporation
IXGC16N60B2 - IGBT
www.DataSheet4U.com IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Pre.
IXYS Corporation
IXGC16N60B2D1 - IGBT
www.DataSheet4U.com IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Pre.
IXYS
IXGH36N60B3D1 - Medium-Speed Low-Vsat PT IGBT
GenX3TM 600V IGBT w/ Diode IXGH36N60B3D1 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching VCES = IC110 = VCE(sat) ≤ 600V 36A 1.8V TO-247 .
MagnaChip
MDF6N60B - N-Channel Trench MOSFET
MDF6N60B N-channel MOSFET 600V MDF6N60B N-Channel MOSFET 600V, 6A, 1.45Ω General Description The MDF6N60B uses advanced MagnaChip’s MOSFET Technolog.
IXYS
IXGH36N60B3C1 - GenX3 600V IGBT
Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switc.
IXYS Corporation
IXGP16N60B2 - HiPerFAST IGBT
HiPerFASTTM IGBTs B2-Class High Speed IXGA16N60B2 IXGP16N60B2 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol VCE.
IXYS Corporation
IXGA16N60B2D1 - HiPerFAST IGBTs
HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns .
IXYS Corporation
IXGH16N60B2D1 - HiPerFAST IGBTs
HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns .
Microsemi Corporation
APT106N60B2C6 - Super Junction MOSFET
APT106N60B2C6 600V 106A 0.035Ω C O OLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance www.DataSheet4U.net.
IXYS
IXZR16N60B - Z-MOS RF Power MOSFET
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM.
IXYS
IXGH56N60B3 - Medium-Speed Low Vsat PT IGBT
Advance Technical Information GenX3TM 600V IGBT IXGH56N60B3* *Obsolete Part Number VCES = IC110 = VCE(sat) ≤ 600V 56A 1.80V Medium-Speed Low Vsat.
IXYS
IXGH36N60B3 - Medium-Speed Low-Vsat PT IGBT
Advance Technical Information GenX3TM 600V IGBT IXGH36N60B3 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching VCES = IC110 = VCE(sat) ≤ 60.
MagnaChip
MDI6N60B - N-Channel Trench MOSFET
MDI6N60B N-channel MOSFET 600V MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45Ω General Description The MDI6N60B uses advanced MagnaChip’s MOSFET Technol.
IXYS Corporation
IXGA16N60B2 - HiPerFAST IGBT
HiPerFASTTM IGBTs B2-Class High Speed IXGA16N60B2 IXGP16N60B2 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 2.3V 70ns TO-263 AA (IXGA) Symbol VCE.
IXYS Corporation
IXGP16N60B2D1 - HiPerFAST IGBTs
HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns .