7-Ch Datasheet | Specifications & PDF Download

Schottky Barrier Rectifiers Production specification SL22F--SL245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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Product Folder Order Now Technical Documents Tools & Software Support & Community BQ24725A SLUSAL0C – SEPTEMBER 2011 – REVISED JANUARY 2020 BQ247

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ANHUI DONGKE SEMICONDUCTOR CO., LTD OFF-LINE SWITCH MODE POWER CONTROLLER -DK124 SPECIFICATION 1. DESCRIPTION The DK124 is a secondary side fly-back t

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www.fairchildsemi.com FSDM0565R Green Mode Fairchild Power Switch (FPSTM) Features • Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operat

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MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for Paralle

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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www.fairchildsemi.com KA7500B SMPS Controller Features • Internal Regulator Provides a Stable 5V Reference Supply Trimmed to 5% • Uncommitted Output

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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TNY274-280 TinySwitch-III Family Energy-Efficient, Off-Line Switcher with Enhanced Flexibility and Extended Power Range Product Highlights Lowest Sys

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Green Mode Power Switch FSDH321, FSDL321 Description Each product in the FSDx321 (x for H, L) family consists of an integrated Pulse Width Modulator

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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LTK5302 _G11W   LTK5302 BOOST ， 2Ω 11W 。 LTK5302 ， ， EN ， D 、D 、AB 、， IO ， 。   6.5V 7.1V  IO  FM  、 

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Product Folder Order Now Technical Documents Tools & Software Support & Community bq24780S SLUSC27C – APRIL 2015 – REVISED MARCH 2017 bq24780S 1-

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