7N100-C Datasheet | Specifications & PDF Download

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(40 views)

VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) =

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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UNISONIC TECHNOLOGIES CO., LTD 7N100-C 7A, 1000V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 7N100-C provide excellent RDS(ON), low ga

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H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap

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H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ

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H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi

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www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z))

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H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistan

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

(23 views)

Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

(23 views)

Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z))

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H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features • Low on-resistance

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