UNISONIC TECHNOLOGIES CO., LTD 7N100-C 7A, 1000V N.
Renesas Technology
H7N1005LS - Silicon N Channel MOS FET High Speed Power Switching
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Renesas Technology
H7N1004AB - Silicon N Channel MOS FET High Speed Power Switching
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ.
UTC
7N100-C - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 7N100-C 7A, 1000V N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 7N100-C provide excellent RDS(ON), low ga.
IXYS Corporation
IXGH17N100U1 - Low VCE(sat) IGBT with Diode High speed IGBT with Diode
VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi.
Renesas Technology
H7N1005LM - Silicon N Channel MOS FET High Speed Power Switching
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Renesas Technology
H7N1002LD - Silicon N Channel MOS FET High Speed Power Switching
H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 .
Renesas Technology
H7N1002LM - Silicon N Channel MOS FET High Speed Power Switching
H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 .
Renesas
H7N1005DL - Silicon N-Channel MOS FET
H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap.
Renesas
H7N1005DS - Silicon N-Channel MOS FET
H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap.
IXYS Corporation
IXGH17N100AU1 - Low VCE(sat) IGBT with Diode High speed IGBT with Diode
VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi.
Renesas Technology
H7N1004LD - (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching
www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) .
Renesas Technology
H7N1002LS - Silicon N Channel MOS FET High Speed Power Switching
H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 .
Renesas Technology
H7N1004DL - Silicon N Channel MOS FET High Speed Power Switching
H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) =.
Renesas Technology
H7N1004FN - Silicon N Channel MOS FET High Speed Power Switching
H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 Features • Low on-resistance • RDS(on) = 25 mΩ ty.
IXYS Corporation
IXFA7N100P - Power MOSFET
Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD.
IXYS Corporation
IXFP7N100P - Power MOSFET
Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD.
IXYS Corporation
IXGH17N100 - High speed IGBT
Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit.
IXYS Corporation
IXGM17N100 - High speed IGBT
Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit.
IXYS Corporation
IXGH17N100A - High speed IGBT
Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit.
IXYS Corporation
IXGM17N100A - High speed IGBT
Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit.