7N100-C Datasheet | Specifications & PDF Download

VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) =

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi

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H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 Features • Low on-resistance • RDS(on) = 25 mΩ ty

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Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VD

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H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap

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H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ

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H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug.27.2003 www.DataSheet4U.com F

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H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features • Low on-resistance

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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Low V IGBT CE(sat) High speed IGBT VCES IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Symbol Test Condit

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www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z))

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H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006

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H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Cap

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