7N60B Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Volt

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MDF7N60B N-channel MOSFET 600V MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced Ma

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APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070Ω Super Junction MOSFET TO-247 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Ch

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SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 I

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SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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SSF7N60B November 2001 SSF7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc

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HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1

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APT77N60BC6 APT77N60SC6 600V 77A 0.041Ω COOLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=77A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :

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HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1

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HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 File Number 4412.2 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60B3S, HGT1S7N60B3S

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www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 I

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SSS7N60B ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate inp

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SSS7N60B-VB SSS7N60B-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 I

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APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω D3PAK Super Junction MOSFET TO-247 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacita

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Advanced Technical Information HiPerFASTTM IGBT with Diode IXGA 7N60BD1 IXGP 7N60BD1 VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.0 V = 150ns Symbol

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APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070Ω Super Junction MOSFET TO-247 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Ch

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