80-Channel Datasheet | Specifications & PDF Download

NSI6801 Single-Channel Isolated Gate Driver Datasheet (EN) 1.4 Product Overview The NSI6801 is a single-channel isolated gate driver which is pin-com

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AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

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Features • Uses advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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FQPF6N80T — N-Channel QFET® MOSFET FQPF6N80T N-Channel QFET® MOSFET 800 V, 3.3 A, 1.95 Ω Description This N-Channel enhancement mode power MOSFET is

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Silan Microelectronics SVF10N80F/K_Datasheet 10A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N80F/K is an N-channel enhancement mode power MOS

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HAA6801 BOOST , 2 ,AB /D ,2x10W HAA6801BOOST，2 、AB/D，2Ω  AB、D  ，-10dB 2x10W 。  D： －2x6.6W (VDD=4.2V, RL =4Ω，NCN OFF THD+N=10%) HAA6801，

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MMF60R280Q Datasheet MMF60R280Q 600V 0.28Ω N-channel MOSFET  Description MMF60R280Q is power MOSFET using Magnachip’s advanced super junction techno

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N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE STB80NF55-08/-1 STP80NF55-08 www.DataSheet4U.com s s STP80NF55-08 ST

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PAN3080L 30V N-channel enhancement mode MOSFET General Description The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench

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RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w

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MMP60R580P Datasheet MMP60R580P 600V 0.58Ω N-channel MOSFET  Description MMP60R580P is power MOSFET using Magnachip’s advanced super junction techno

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FBM80N70P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 70V/80A RDS(ON) = 6.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg

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FM3080SC Description FM3080SC N-Channel Trench Power MOSFET Features Application  30V,65A  Load Switch  RDS(ON)=5.4mΩ (Typ.) @ VGS =10V 

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WP3080KA Enhancement Mode N-Channel Power MOSFET TO-252/NMOS/30V/±20V/1.6V/80A/4.5mΩ Rev0.9 WP3080KA 30V, 4.5mΩ, 80A, Single N-Channel 1.Features ◆

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FDB0165N807L N-Channel PowerTrench® MOSFET December 2015 FDB0165N807L N-Channel PowerTrench® MOSFET 80 V, 310 A, 1.6 mΩ Features General Descripti

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SGL8023W LED 1.0 。 SGL8023W LED 1.

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30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( )

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FDB0190N807L N-Channel PowerTrench® MOSFET March 2016 FDB0190N807L N-Channel PowerTrench® MOSFET 80 V, 270 A, 1.7 mΩ Features „ Max rDS(on) = 1.7 m

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RJK0822SPN-VB RJK0822SPN-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration 80 V

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