81W Datasheet | Specifications & PDF Download

REALTEK RTD 2271W / 2281W Series-GR RTD 2271W / 2281W Family Dual-Input LCD Display Controller Brief Spec Version 1.02 Last updated: 2009/12/22 1 R

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BAR81 Silicon RF Switching Diode
Designed for use in shunt configuration in high performance RF switches
High shunt signal isolation
Low shu

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www.DataSheet4U.com Ordering number : ENN7253 CMOS IC LC723481W,723482W,723483W Low-Voltage ETR-Controller Overview The LC723481W, 723482W, and 72

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XPT IGBT Module MIXA81WB1200TEH tentative 3~ Rectifier Brake Chopper 3~ Inverter VRRM = I DAV = I FSM = 1600 V VCES = 1200 V VCES = 1200 V 290

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BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB a

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BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss

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Round Type φ 5.0 mm Series 2.0 Max. NOT SOLDERED φ 5.0 ± 0.2 Unit: mm Conventional Part No. Global Prat No. Lighting Color 0.6 0.8 LN81WPH ··

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin

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www.DataSheet4U.com Ordering number : ENN7253 CMOS IC LC723481W,723482W,723483W Low-Voltage ETR-Controller Overview The LC723481W, 723482W, and 72

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BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Complements the 2A1576A Production specification 2SC4

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TC7SP381WBG TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SP381WBG Dual supply 2-Input Exclusive-NOR Gate with Level Translator The T

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2SC4081W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features 。 Low Cob.

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SB358xB Capacitive Touch Controller IC Datasheet Revision 1.0 Jan. 2015 ENE RESERVES THE RIGHT TO AMEND THIS DOCUMENT WITHOUT NOTICE AT ANY TIME. ENE

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BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at

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Document 1368 81W PoE Transformer ForTIIndustrialPOEIsolated Flyback Reference Design • Developed for Texas Instruments 81W Industrial POE Isolated

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GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1281W-1, W-2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26W T-1¾ (5 mm)

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www.DataSheet4U.com Ordering number : ENN7253 CMOS IC LC723481W,723482W,723483W Low-Voltage ETR-Controller Overview The LC723481W, 723482W, and 72

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GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1281W-1, W-2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26W T-1¾ (5 mm)

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CYStech Electronics Corp. High Frequency NPN Epitaxial Planar Transistor Spec. No. : C213WC3 www.DataSheet4U.com Issued Date : 2003.08.15 Revised Dat

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BFP 181W NPN Silicon RF Transistor
For low noise, high-gain broadband amplifier at 3 4 collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1

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