8205A Datasheet | Specifications & PDF Download

DESCRIPTION The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65

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8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p

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PE8205A N-Channel Enhancement Mode Power MOSFET Description The PE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charg

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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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MX8205AH N-Channel Enhancement Mode Power MOSFET The MX8205AH uses advanced trench technology to provide excellent RDS(ON), low gate charge and op

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TA8205AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8205AH,TA8205AL 18W BTL × 2CH Audio Power Amplifier The thermal resistan

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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ

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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circ

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N MOSFET 8205A/8205B/8205C 1. N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。 2. z z z 2.5V z VBDSB=20V z IDB =B 6A @ VGB S=B 4.5V z 8205A ：

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Dual N-Channel Enhancement Mode Power MOSFET MX8205A-8PIN MX8205A DESCRIPTION The MX8205A uses advanced trench technology to provide excellent RDS(ON)

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GOFORD 8205A P R ODUC T S UMMAR Y VDSS RDS(ON) ID @ 4.0V (typ) 20V 21mΩ 4A - D1 D2 G1 G2 S1 S2 F E AT UR E S S uper high dense cell desig

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge an

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S-8205A/B Series www.sii-ic.com © SII Semiconductor Corporation, 2010-2016 BATTERY PROTECTION IC FOR 4-SERIES OR 5-SERIES CELL PACK Rev.1.8_00 The

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Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(O

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Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : Page No. : 1/4 H8205A Dual N-Channel Enhancement-M

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205A Dual N-Channel MOSFET V(BR)DSS 20 V RDS(on)MAX ID

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N-Channel Enhancement Mode MOSFET SMC8205AW ■DESCRIPTION 20V N-Channel Enhancement Mode MOSFET ■FEATURE The SMC8205AW is the Dual N-Channel logic

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http://www.ncepower.com Pb Free Product NCE8205A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205A uses advanced trench technolo

Rating: 1 ★ (3 votes)