8N65F Datasheet | Specifications & PDF Download

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.4Ω@VGS = 10V. Pb  Ultra Low gate charge (typica

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Silan Microelectronics SVF18N65F/T/PN_Datasheet 18A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF18N65F/T/PN is an N-channel enhancement mode

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JCS8N65FB-VB JCS8N65FB-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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BRF8N65(CS8N65F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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SVF8N65T/F_Datasheet 8A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N65T/F is a N-channel enhancement mode power MOS field effect transistor which

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IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKA08N65F5 650V DuoPack IGBT and Diode

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Silicon N-Channel Power MOSFET ○R CS8N65F A9R-G General Description： CS8N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the

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IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKP08N65F5 650V DuoPack IGBT and Diode

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NCE08N65D,NCE08N65,NCE08N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

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Silicon N-Channel Power MOSFET ○R CS8N65F A9H General Description： CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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N-CHANNEL MOSFET MAIN CHARACTERISTICS ID VDSS RDS(ON)（VGS=10V） QG 8A 650V 1.5Ω 19nC SL8N65F    LED APPLICATIONS  High efficiency switch

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