9N60 Datasheet | Specifications & PDF Download

FQA19N60 — N-Channel QFET® MOSFET FQA19N60 N-Channel QFET® MOSFET 600 V, 18.5 A, 380 mΩ April 2014 Description This N-Channel enhancement mode powe

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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WMK09N60VD, WML09N60VD, WMH09N60VD, WMM09N60VD WMN09N60VD, WMO09N60VD, WMP09N60VD, WMG09N60VD 600V 1.0Ω Super Junction Power MOSFET Description WMOST

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PD - 91817A SMPS MOSFET IRFS9N60A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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SMPS MOSFET PD - 95538 IRFS9N60APbF RDS(on) max 0.75Ω HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Powe

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HFH19N60 OCT 2009 HFH19N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 18.5 A FEATURES ‰ Originative New Design ‰ Superior Avalan

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www.vishay.com IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (

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isc N-Channel MOSFET Transistor TK39N60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mode: Vth =3 to4.5V (VDS = 10 V,

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WMK09N60VD, WML09N60VD, WMH09N60VD, WMM09N60VD WMN09N60VD, WMO09N60VD, WMP09N60VD, WMG09N60VD 600V 1.0Ω Super Junction Power MOSFET Description WMOST

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WML09N60C2, WMH09N60C2, WMM09N60C2 WMO09N60C2, WMP09N60C2, WMG09N60C2 600V 0.83Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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WML09N60C2, WMH09N60C2, WMM09N60C2 WMO09N60C2, WMP09N60C2, WMG09N60C2 600V 0.83Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast re

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GPT09N60 / GPT09N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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MOSFETs Silicon N-Channel MOS (DTMOS) TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK39N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse r

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FMR19N60ES Super FAP-E3S series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on)

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Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan

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iscN-Channel MOSFET Transistor IRFS9N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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WMK09N60VD, WML09N60VD, WMH09N60VD, WMM09N60VD WMN09N60VD, WMO09N60VD, WMP09N60VD, WMG09N60VD 600V 1.0Ω Super Junction Power MOSFET Description WMOST

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