9N60 Datasheet | Specifications & PDF Download

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CYStech Electronics Corp. Spec. No. : C125FP Issued Date : 2015.12.23 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN9N60

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HFH19N60 OCT 2009 HFH19N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 18.5 A FEATURES ‰ Originative New Design ‰ Superior Avalan

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SMPS MOSFET PD - 95907 IRFPS29N60LPbF Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Suppli

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SMPS MOSFET PD - 95538 IRFS9N60APbF RDS(on) max 0.75Ω HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Powe

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600V N-Channel MOSFETs PDP09N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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www.vishay.com IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (

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MDP9N60 N-channel MOSFET 600V MDP9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDP9N60 uses advanced MagnaChip’s MOSFET Technology,

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FQA19N60 — N-Channel QFET® MOSFET FQA19N60 N-Channel QFET® MOSFET 600 V, 18.5 A, 380 mΩ April 2014 Description This N-Channel enhancement mode powe

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CYStech Electronics Corp. Spec. No. : C125E3 Issued Date : 2016.03.21 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN9N60

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INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 9N60 ·FEATURES ·Drain Current –ID= 8.5A@ TC=25

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MDF9N60 N-channel MOSFET 600V MDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDF9N60 uses advanced Magnachip’s MOSFET Technology,

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MOSFET - Power, Single N-Channel, SUPERFET) V, Easy Drive, TO247-3L 600 V, 99 mW, 33 A NTHL099N60S5 Description SUPERFET V MOSFET Easy Drive series

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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MSC49N60X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv

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Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhan

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www.vishay.com IRFB9N60A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Q

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MDF9N60 N-channel MOSFET 600V MDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDF9N60 uses advanced MagnaChip’s MOSFET Technology, w

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600V N-Channel MOSFETs PDF09N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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PD - 90380 PROVISIONAL SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefit

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