9N60 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specification 9N60 ·FEATURES ·Drain Current –ID= 8.5A@ TC=25

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FQA19N60 — N-Channel QFET® MOSFET FQA19N60 N-Channel QFET® MOSFET 600 V, 18.5 A, 380 mΩ April 2014 Description This N-Channel enhancement mode powe

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WMF09N60C2 600V 0.83Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is utilizing char

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STL19N60M6 Datasheet N-channel 600 V, 255 mΩ typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package 5 432 1 PowerFLAT 8x8 HV Drain(5) Gate(

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WMK09N60VD, WML09N60VD, WMH09N60VD, WMM09N60VD WMN09N60VD, WMO09N60VD, WMP09N60VD, WMG09N60VD 600V 1.0Ω Super Junction Power MOSFET Description WMOST

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TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK39N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse r

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MDF9N60 N-channel MOSFET 600V MDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDF9N60 uses advanced Magnachip’s MOSFET Technology,

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WMN09N60C2 WMK09N60C2 600V 0.83Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd generation super junction MOSFET family that is uti

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WMK09N60VD, WML09N60VD, WMH09N60VD, WMM09N60VD WMN09N60VD, WMO09N60VD, WMP09N60VD, WMG09N60VD 600V 1.0Ω Super Junction Power MOSFET Description WMOST

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WML09N60C2, WMH09N60C2, WMM09N60C2 WMO09N60C2, WMP09N60C2, WMG09N60C2 600V 0.83Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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PD - 94622 SMPS MOSFET IRFPS29N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Serv

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HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE(sat) tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) www

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MOSFETs Silicon N-Channel MOS (DTMOS) TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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FMR19N60ES Super FAP-E3S series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on)

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www.vishay.com SiHG039N60E Vishay Siliconix E Series Power MOSFET TO-247AC D G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RD

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FCP099N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP099N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 37 A, 99 mΩ June 2016 Features • 6

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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STD9N60M6 Datasheet N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01476v1_tab Feat

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WML09N60C2, WMH09N60C2, WMM09N60C2 WMO09N60C2, WMP09N60C2, WMG09N60C2 600V 0.83Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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WML09N60C2, WMH09N60C2, WMM09N60C2 WMO09N60C2, WMP09N60C2, WMG09N60C2 600V 0.83Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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