Alliance Semiconductor Datasheet | Specifications & PDF Download

February 2005 ® AS7C33128NTD32B AS7C33128NTD36B 3.3V 128K×32/36 Pipelined SRAM with NTDTM Features • Organization: 131,072 words × 32 or 36 bits • N

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April 2005 ® AS7C33128NTF32B AS7C33128NTF36B 3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM Features • Organization: 131,072 words × 32 o

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AS4C128M16D2A-25BCN AS4C128M16D2A-25BIN Revision History 2Gb AS4C128M16D2A - 84 ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Dat

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www.DataSheet4U.com Production March 2003 ® P1818/19/20/21/22 Low Power Mobile VGA EMI Reduction IC Features • • • • FCC approved method of EMI a

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www.DataSheet4U.com Production March 2003 ® P1818/19/20/21/22 Low Power Mobile VGA EMI Reduction IC Features • • • • FCC approved method of EMI a

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www.DataSheet4U.com October 2003 rev 1.0 Low-Power Mobile VGA EMI Reduction IC Features FCC approved method of EMI attenuation. Generates a low EMI s

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April 2005 ® AS7C33128NTD18B 3.3V 128K×18 Pipelined SRAM with NTDTM Features • Organization: 131,072 words × 18 bits • NTD™ architecture for efficie

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April 2005 ® AS7C33128NTF18B 3.3V 128K x 18 Flowthrough Synchronous SRAM with NTDTM Features • • • • • • • • Organization: 131,072 words × 18 bits N

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April 2005 ® AS7C33128NTF32B AS7C33128NTF36B 3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM Features • Organization: 131,072 words × 32 o

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November 2003 rev 1.0 www.DataSheet4U.com ASM3P2531A Features FCC approved method of EMI attenuation. Generates a low EMI spread spectrum of the inp

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AS4C4M16SA-Automotive Revision History Revision Rev 1.0 Rev 2.0 Rev 3.0 Details Preliminary datasheet Add 143MHZ parts. 1. Remove AS4C4M16SA-7BAN,

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AS9FxxG08SA 1Gb / 2Gb / 4Gb / 8Gb, x8bits SLC Parallel NAND FLASH Revision History AS9Fxx Series : 1Gb / 2Gb / 4Gb / 8Gb, x8bits, 1.8V/3.3V SLC Paral

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March 2002 ® 5V/3.3V 64K×16 CMOS SRAM AS7C1026 AS7C31026 Features • AS7C1026 (5V version) • AS7C31026 (3.3V version) • Industrial and commercial ve

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March 2001 ® 5V/3.3V 128K×8 CMOS SRAM (Evolutionary Pinout) AS7C1024 AS7C31024 Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Indust

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AS4C128M16D3LB-12BCN Revision History 2Gb AS4C128M16D3LB-12BCN - 96 ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date Mar. 2016

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Production February 2003 ® P2779A Low-Cost Notebook EMI Reduction IC Features • • • • • • Provides up to 15 dB of EMI suppression FCC approved meth

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October 2003 rev 1.0 2.5V LCD Panel Reduction IC Features § § § § § § § § § § § § § L2042A cost savings by reducing the number of circuit board laye

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$XJXVW  Š $6&0 ( 9 0î &026 '5$0 ('2 )HDWXUHV • Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20

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May 2001 ® AS4C4M4E1 4M×4 CMOS DRAM (EDO) family Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 n

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