Apm Datasheet | Pinout, Features, Price Comparison & PDF

Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

APM4317K Features • -30V/-9A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V R DS(ON) = 24mΩ(typ.) @ V GS = -4.5V • Super High Dense Cell Design • Reli

Datasheet APM32F030x4x6x8 Arm® Cortex®-M0+ based 32-bit MCU Version: V1.6 www.geehy.com Page Product characteristics  System Architecture 32-bit A

APM4550J Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) =

APM4015PU P-Channel Enhancement Mode MOSFET Features Pin Description • -40V/-45A, RDS(ON)= 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V

APM4435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5

APM4568J Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS =

APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V

sales.Mr.wang13826508770 www.sztssd.com Description AP6G04S 40V N+P-Channel Enhancement Mode MOSFET The AP6G04S uses advanced trench technology to

APM9435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS = -10V RDS(ON) = 80mΩ(typ.) @ VGS = -4

APM3023N N-Channel Enhancement Mode MOSFET Features • • • • 30V/30A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V Super High Dense Cell D

www.DataSheet4U.com APM2054N N-Channel Enhancement Mode MOSFETE Features • • • • 20V/6A, RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V

APM4018NU N-Channel Enhancement Mode MOSFET Features • 40V/60A, RDS(ON)=6.5mΩ (typ.) @ VGS=10V RDS(ON)=9.5mΩ (typ.) @ VGS=4.5V Pin Description D G S

APM2510NU N-Channel Enhancement Mode MOSFET Features • 25V/50A, RDS(ON)=8.5mΩ (typ.) @ VGS=10V RDS(ON)=15mΩ (typ.) @ VGS=4.5V G D S Pin Description

AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent RDS(ON), low gate cha

AP4606B 30V N+P-Channel Enhancement Mode MOSFET Description The AP4606B uses advanced trench technology to provide excellent RDS(ON), low gate charge

Description AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate cha

APM4910K Dual N-Channel Enhancement Mode MOSFET Features • Channel 1 30V/7A, RDS(ON) = 22mΩ (typ.) @ VGS = 10V R DS(ON) = 26mΩ (typ.) @ V G

Datasheet APM32E103xCxE Arm® Cortex®-M3 based 32-bit MCU Version: V1.6 1. Product characteristics ◼ Core – 32-bit Arm® Cortex®-M3 core – Up to 120MHz

sales.Mr.wang13826508770 www.sztssd.com Description AP100N03D 30V N-Channel Enhancement Mode MOSFET The AP100N03D uses advanced trench technology t