B950 Datasheet | Specifications & PDF Download

www.DataSheet4U.com FEATURES • • OXCB950 DATASHEET Integrated High Performance UART Cardbus / 3.3v PCI interface DS_B005A_00 • • • • • • • • • • Arb

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Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD127

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Photologic® Dual Channel Encoder OPB950Z, OPB951 Features:  Dual channel outputs for Quadrature Output  Open collector inverter outputs  0.010” (0.

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Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD127

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Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power

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FDB9503L-F085 P-Channel PowerTrench® MOSFET FDB9503L-F085 P-Channel PowerTrench® MOSFET - 40 V, - 110 A, 2.6 mΩ S D Features „ Typical RDS(on) = 2.

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Product Brief 3G Basestation Processor 3GPP/UMTS Physical Channel Processing T h e 3 G b a s e s t a t i o n p r o c e s s o r is a single-chip, phys

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IB950 Intel ® CoreTM 2 Duo/ Celeron GME965 5.25” Disk Size Embedded Board USER’S MANUAL Version 1.0 www.DataSheet4U.com Acknowledgments Award is a

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Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power

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XB9501G ______________________________________ ________________________________ ____________________ One Cell Lithium-ion/Polymer Battery Protectio

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Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD127

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EURO QUARTZ www.DataSheet4U.com CERAMIC RESONATORS ZTB SERIES ZTB SERIES 700kHz to 999kHz Test Circuit ZTB Series 700kHz to 999kHz 2.2 5.0 Vdd 1/

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5.25 SBC Disk-Size SBCs Socket P Core™2 Duo 5.25 Disk-Size SBC w/ Intel® GME965 Chipset Intel® Core™2 Duo-Based IB950 Socket P IDE PCI Slot Gigabi

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2S

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PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect T

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PMDXB950UPEL 20 V, dual P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect

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PMZB950UPEL 20 V, P-channel Trench MOSFET 5 December 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transist

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DF N1 0 PMDXB950UPE 10 September 2013 10B -6 20 V, dual P-channel Trench MOSFET Product data sheet 1. General description Dual P-channel enhancem

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PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (

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PMZB950UPE 28 July 2014 SO T8 83 B 20 V, P-channel Trench MOSFET Product data sheet 1. General description P-channel enhancement mode Field-Effec

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