Power Transistors 2SB950, 2SB950A Silicon PNP epi.
OXCB950 - Integrated High Performance UART Cardbus / 3.3v PCI interface
www.DataSheet4U.com FEATURES • • OXCB950 DATASHEET Integrated High Performance UART Cardbus / 3.3v PCI interface DS_B005A_00 • • • • • • • • • • Arb.IB950 - Disk-Size SBCs
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Photologic® Dual Channel Encoder OPB950Z, OPB951 Features: Dual channel outputs for Quadrature Output Open collector inverter outputs 0.010” (0..FDB9503L-F085 - P-Channel Power MOSFET
FDB9503L-F085 P-Channel PowerTrench® MOSFET FDB9503L-F085 P-Channel PowerTrench® MOSFET - 40 V, - 110 A, 2.6 mΩ S D Features Typical RDS(on) = 2..2SB950 - PNP Transistor
Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD127.PMB9500 - 3G Basestation Pro cessor
Product Brief 3G Basestation Processor 3GPP/UMTS Physical Channel Processing T h e 3 G b a s e s t a t i o n p r o c e s s o r is a single-chip, phys.IB950 - Disk Size Embedded Board User Manual
IB950 Intel ® CoreTM 2 Duo/ Celeron GME965 5.25” Disk Size Embedded Board USER’S MANUAL Version 1.0 www.DataSheet4U.com Acknowledgments Award is a .2SB950 - Power Transistors
Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power .2SB950A - Power Transistors
Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power .PMZB950UPE - P-channel Trench MOSFET
PMZB950UPE 28 July 2014 SO T8 83 B 20 V, P-channel Trench MOSFET Product data sheet 1. General description P-channel enhancement mode Field-Effec.B950A - 2SB950A
Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD127.PMDXB950UPE - dual P-channel MOSFET
PMDXB950UPE 20 V, dual P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect T.PMZB950UPE - P-channel MOSFET
PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (.XB9501G - One Cell Lithium-ion/Polymer Battery Protection IC
XB9501G ______________________________________ ________________________________ ____________________ One Cell Lithium-ion/Polymer Battery Protectio.ZTB950E - CERAMIC RESONATORS
EURO QUARTZ www.DataSheet4U.com CERAMIC RESONATORS ZTB SERIES ZTB SERIES 700kHz to 999kHz Test Circuit ZTB Series 700kHz to 999kHz 2.2 5.0 Vdd 1/.2SB950A - Silicon PNP Power Transistor
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2S.PMDXB950UPE - dual P-channel Trench MOSFET
DF N1 0 PMDXB950UPE 10 September 2013 10B -6 20 V, dual P-channel Trench MOSFET Product data sheet 1. General description Dual P-channel enhancem.B950 - 2SB950
Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD127.PMDXB950UPEL - dual P-channel MOSFET
PMDXB950UPEL 20 V, dual P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect .PMZB950UPEL - P-channel MOSFET
PMZB950UPEL 20 V, P-channel Trench MOSFET 5 December 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transist.