BF998 Datasheet | Specifications & PDF Download

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precaution

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DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 0

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Silicon N Channel MOSFET Tetrode BF 998 Features q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input sta

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BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1

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DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 0

(29 views)

BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precaution

(29 views)

BF998 Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to

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BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precaution

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Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz •

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Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz •

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BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1

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DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semic

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