BNT SPECIFICATIONS Electrical Ratings Electrical L.
BeRex
BNT02 - BroadBand AMP
BNT02 40-6000 MHz BroadBand AMP Device Features • Gain = 17.5 dB @ 3500MHz • OIP3 = 37.5 dBm @ 3500MHz • Output P1 dB = 19.6 dBm @ 3500 MHz • N.F = 1.
Hitachi Semiconductor
HA11517BNT - DISPLAY DEFLECTION SIGNAL PROCESSOR
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.
ST Microelectronics
M29F002BNT - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
M29F002BT M29F002BB, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRA.
Hitachi Semiconductor
HA19211BNT - HIGH SPEED LOW POWER 8 BIT A/D FLASH CONVERTER
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Fairchild Semiconductor
FGA50N100BNTD - IGBT
FGA50N100BNTD — 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General Description Using Fairchild's proprietary trench .
Fairchild Semiconductor
FGA50N100BNTD2 - IGBT
FGA50N100BNTD2 — 1000 V NPT Trench IGBT FGA50N100BNTD2 1000 V NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.
CIT
BNT - CIT SWITCH
BNT SPECIFICATIONS Electrical Ratings Electrical Life Contact Resistance Dielectric Strength Insulation Resistance Operating Temperature Storage Tempe.
ON Semiconductor
NGB8207BNT4G - Ignition IGBT
NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuit.
ON Semiconductor
NGB8207ABNT4G - Ignition IGBT
NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circu.
ETC
BNT-600A - PCB
1 2 3 +5V +12V R40 4 5 6 7 8 IN2 Q7 BLACK R22 R9 R7 R8 R25 J2 Q6 D Q5 D S G R18 C26 C27 S G Q3 S D G Q4 S G J1 IN1 BLUE +12V LED1 D R2.
ETC
BNT-V13A - PCB
1 2 3 +5V +12V R40 4 5 6 7 8 IN2 Q7 BLACK R22 R9 R7 R8 R25 J2 Q6 D Q5 D S G R18 C26 C27 S G Q3 S D G Q4 S G J1 IN1 BLUE +12V LED1 D R2.
Fairchild Semiconductor
FGA50N100BNT - 50A NPT-Trench IGBT CO-PAK
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK tm Features • High Speed Switching • Low .
BeRex
BNT01 - 1.5-3.0 GHz Wideband High Linearity LNA Gain Block
BNT01 1.5 -3.0 GHz Wideband High Linearity LNA Gain Block Preliminary Datasheet Device Features Internally matched to 50 ohms This can be operat.
Fairchild Semiconductor
G60N100BNTD - NPT IGBT
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.
ROHM
SMLS14BNTT68 - LED
SMLS14BNTT68 Data Sheet 1. CONSTRUCTION Blue Surface Mount Chip LEDs featuring with lens InGaN packed with transparent colorless resin. 2. USAGE *.
Fairchild Semiconductor
FGL60N100BNTD - NPT IGBT
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.
ETC
BNT-V1.1 - PCB
1 2 3 +5V +12V R40 4 5 6 7 8 IN2 Q7 BLACK R22 R9 R7 R8 R25 J2 Q6 D Q5 D S G R18 C26 C27 S G Q3 S D G Q4 S G J1 IN1 BLUE +12V LED1 D R2.
ON Semiconductor
NRVBS360BNT3 - Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 This device employs the Schottky Barrier prin.
