BNT Datasheet | Specifications & PDF Download

1 2 3 +5V +12V R40 4 5 6 7 8 IN2 Q7 BLACK R22 R9 R7 R8 R25 J2 Q6 D Q5 D S G R18 C26 C27 S G Q3 S D G Q4 S G J1 IN1 BLUE +12V LED1 D R2

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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BNT02 40-6000 MHz BroadBand AMP Device Features • Gain = 17.5 dB @ 3500MHz • OIP3 = 37.5 dBm @ 3500MHz • Output P1 dB = 19.6 dBm @ 3500 MHz • N.F = 1

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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1 2 3 +5V +12V R40 4 5 6 7 8 IN2 Q7 BLACK R22 R9 R7 R8 R25 J2 Q6 D Q5 D S G R18 C26 C27 S G Q3 S D G Q4 S G J1 IN1 BLUE +12V LED1 D R2

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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FGA50N100BNTD2 — 1000 V NPT Trench IGBT FGA50N100BNTD2 1000 V NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2

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NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuit

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BNT SPECIFICATIONS Electrical Ratings Electrical Life Contact Resistance Dielectric Strength Insulation Resistance Operating Temperature Storage Tempe

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1 2 3 +5V +12V R40 4 5 6 7 8 IN2 Q7 BLACK R22 R9 R7 R8 R25 J2 Q6 D Q5 D S G R18 C26 C27 S G Q3 S D G Q4 S G J1 IN1 BLUE +12V LED1 D R2

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Surface Mount Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 This device employs the Schottky Barrier prin

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FGA50N100BNTD — 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General Description Using Fairchild's proprietary trench

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M29F002BT M29F002BB, M29F002BNT 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRA

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NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circu

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SMLS14BNTT68 Data Sheet 1. CONSTRUCTION Blue Surface Mount Chip LEDs featuring with lens InGaN packed with transparent colorless resin. 2. USAGE *

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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK tm Features • High Speed Switching • Low

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BNT01 1.5 -3.0 GHz Wideband High Linearity LNA Gain Block Preliminary Datasheet Device Features  Internally matched to 50 ohms  This can be operat

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