BSS139 Datasheet | Specifications & PDF Download

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Public BSS139I Final datasheet Small‑Signal Transistor Features • N‑channel • Depletion mode • dv/dt rated • Halogen free according to IEC61249‑2‑21

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LBSS139LT1G www.VBsemi.com LBSS139LT1G Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V SOT-23

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LMNBSS139JZF Rev. 1.0 LMNBSS139JZF 60V N-Channel Enhancement Mode MOSFET Features ● RDS(ON)=2.5Ω@VGS=4.5V ● RDS(ON)=4Ω@VGS=2.5V ● Improved dv/dt cap

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LMNBSS139TFF Rev. 1.0 LMNBSS139TFF 60V N-Channel MOSFET Features ● 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V ● Improved dv/dt capability ● Fast switching ● 1

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SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-platin

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LMNNBSS139T Rev. 1.0 LMNNBSS139T Dual N-Channel Enhancement Mode MOSFET Features  60V,0.2A, RDS(ON)＜2.5Ω@VGS=4.5V  Improved dv/dt Capability  Fas

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SIPMOS® Small-Signal Transistor q q q q q q q BSS 139 VDS 250 V ID 0.04 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Available g

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LMNBSS139K Rev. 1.0 LMNBSS139K 60V N-Channel MOSFET Features ● 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V ● Improved dv/dt capability ● Fast switching ● Green

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- These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially T

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LMNBSS139W Rev. 1.0 LMNBSS139W 60V N-Channel MOSFET Features ● 60V, 0.24A, RDS(ON)=2.5Ω@VGS=4.5V ● Improved dv/dt capability ● Fast switching ● Gree

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GSMBSS139 50V N-Channel MOSFETs Product Description These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

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GSMBSS139Y Dual N-Channel Enhancement MOSFET Product Description These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trenc

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