BUZ31 Datasheet | Specifications & PDF Download

BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 31 VDS 200 V ID 14.5 A RDS

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BUZ31 H3045 A . Pb-free lead plating; RoHS compliant . Halogen-free according to IEC61249-2-21 BUZ31 H3045A PG-TO263-3 Pb-free Yes Rev 2.1 2009-

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isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·High current capability ·150℃ operating temperatu

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUZ31H3046 ·FEATURES ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum

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BUZ 310 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 310 VDS 1000 V ID 2.5 A RDS(on) 5Ω Package

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SIPMOS ® Power Transistor BUZ 31L • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S V

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SIPMOS ® Power Transistor BUZ 31 H • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halogen-

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BUZ 312 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 312 VDS 1000 V ID 6A RDS(

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SEMICONDUCTORS BUZ31 POWER MOS TRANSISTORS FEATURE • • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS. ABSOLUTE

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BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ord

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SIPMOS ® Power Transistor BUZ 31 H3046 • N channel • Enhancement mode • Avalanche-rated • Normal Level . Pb-free lead plating; RoHs compliant . Halo

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BUZ 311 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 311 VDS 1000 V ID 2.5 A RDS(on) 5Ω Package

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BUZ 31 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 31 L Pin 2 D Pin 3 S VDS 200 V

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