Crystal unit SMALL CYLINDER LOW/MEDIUM-FREQUENCY C.
GROUP-TEK
CM8-001R - COMMON MODE CHOKES
® A Leading Supplier of Magnetic Components COMMON MODE CHOKES COMMON MODE CHOKES Suited for LAN and Telecom Applications ● Compliant with IEEE 802.
Advanced Power Technology
APT1001R1AVR - MOSFET
APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.
Advanced Power Technology
APT1001R1BN - MOSFET
D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1.
Advanced Power Technology
APT1001R1BVFR - MOSFET
APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE.
Advanced Power Technology
APT1001R1HVR - MOSFET
APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t.
Microchip Technology
MCP6001R - Low-Power Op Amp
MCP6001/1R/1U/2/4 1 MHz, Low-Power Op Amp Features • Available in 5-Lead SC-70 and 5-Lead SOT-23 Packages • Gain Bandwidth Product: 1 MHz (typical) •.
Advanced Power Technology
APT1001R3BN - MOSFET
D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1.
Advanced Power Technology
APT1001R6BN - MOSFET
D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10.
Advanced Power Technology
APT1001RBLC - MOSFET
APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channe.
Advanced Power Technology
APT1001RSLC - MOSFET
APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channe.
Advanced Power Technology
APT1001RSVR - MOSFET
APT1001RSVR 1000V 11A 1.000Ω POWER MOS V ® D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new te.
Advanced Power Technology
APT1001RBN - MOSFET
D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT50.
Advanced Power Technology
APT1001RBVR - MOSFET
APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno.
EPSON Electronics
C-001R - Small Cylinder Low / Medium Frequency Crystal Unit
Crystal unit SMALL CYLINDER LOW/MEDIUM-FREQUENCY CRYSTAL UNIT C-4-TYPE • Photolithography finished allows uniform and stable performance. • Small and.
DACO
PFL5001R - Industrial Press-Fit Power Rectifiers
MFeaaxtiuDmrAeuCsmO RSaEtMinICgOsNDUCTOR CO.,LTD.WWWWWWWWWWWW.W1EWW.lW01WWeMrjMDAB.PCMIFACu0W0en1WPWcotl.evCnPPPuuPPPPaYasSOas0OWo0HT1WHDLatWerRacFFFr.
Sanyo Semicon Device
LE28F4001R - 4 MEG (524288 words x 8 bits) Flash Memory
Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs .
Sanyo Semicon Device
LE28F4001R-15 - 4 MEG (524288 words x 8 bits) Flash Memory
Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs .
Sanyo Semicon Device
LE28F4001R-20 - 4 MEG (524288 words x 8 bits) Flash Memory
Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs .
Sanyo Semicon Device
LE28FV4001R - 4MEG (52488 x 8 Bits) Flash Memory
Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are .
