C-001R Datasheet | Specifications & PDF Download

Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

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Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

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Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs

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® A Leading Supplier of Magnetic Components COMMON MODE CHOKES COMMON MODE CHOKES Suited for LAN and Telecom Applications ● Compliant with IEEE 802

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Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs

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APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

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APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE

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MCP6001/1R/1U/2/4 1 MHz, Low-Power Op Amp Features • Available in 5-Lead SC-70 and 5-Lead SOT-23 Packages • Gain Bandwidth Product: 1 MHz (typical) •

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

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APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t

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D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMG2001R2/D Gallium Arsenide CATV Integrated Amplifier

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Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

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Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are

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MODEL HM53 SERIES High Power Low Cost Inductors NEW PRODUCT FEATURES AND BENEFITS • High current capability • Single layer, cost effective design •

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MODEL HM53 SERIES High Power Low Cost Inductors NEW PRODUCT FEATURES AND BENEFITS • High current capability • Single layer, cost effective design •

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

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APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

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APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channe

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APT1001RSVR 1000V 11A 1.000Ω POWER MOS V ® D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new te

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