C-001R Datasheet | Specifications & PDF Download

APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

Rating: 1 ★ (6 votes)

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Replaced by MMG1001NT1. N suffix indicates 260°C reflow capable. The

Rating: 1 ★ (6 votes)

Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are

Rating: 1 ★ (5 votes)

® A Leading Supplier of Magnetic Components COMMON MODE CHOKES COMMON MODE CHOKES Suited for LAN and Telecom Applications ● Compliant with IEEE 802

Rating: 1 ★ (5 votes)

FJX4001R FJX4001R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

Rating: 1 ★ (5 votes)

D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT50

Rating: 1 ★ (5 votes)

Crystal unit SMALL CYLINDER LOW/MEDIUM-FREQUENCY CRYSTAL UNIT C-4-TYPE • Photolithography finished allows uniform and stable performance. • Small and

Rating: 1 ★ (5 votes)

LAB TO3 Package Outline. Dimensions in mm (Inches) SEME SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1

Rating: 1 ★ (4 votes)

APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE

Rating: 1 ★ (4 votes)

D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

Rating: 1 ★ (4 votes)

D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

Rating: 1 ★ (4 votes)

DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Sem

Rating: 1 ★ (4 votes)

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMG2001R2/D Gallium Arsenide CATV Integrated Amplifier

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

Rating: 1 ★ (3 votes)

Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs

Rating: 1 ★ (3 votes)

Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are

Rating: 1 ★ (3 votes)

FJX3001R FJX3001R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Res

Rating: 1 ★ (3 votes)

APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

Rating: 1 ★ (3 votes)

D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

Rating: 1 ★ (3 votes)