C-001R Datasheet | Pinout, Features, Price Comparison & PDF

Crystal unit SMALL CYLINDER LOW/MEDIUM-FREQUENCY CRYSTAL UNIT C-4-TYPE • Photolithography finished allows uniform and stable performance. • Small and

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® A Leading Supplier of Magnetic Components COMMON MODE CHOKES COMMON MODE CHOKES Suited for LAN and Telecom Applications ● Compliant with IEEE 802

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MODEL HM53 SERIES High Power Low Cost Inductors NEW PRODUCT FEATURES AND BENEFITS • High current capability • Single layer, cost effective design •

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PD-97829 HIGH RELIABILITY, RADIATION HARDENED, LOW POWER, DC-DC CONVERTER DH5001R803R3P 50V Input, Regulated Dual Outputs Description The DH-Series

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MCP6001/1R/1U/2/4 1 MHz, Low-Power Op Amp Features • Available in 5-Lead SC-70 and 5-Lead SOT-23 Packages • Gain Bandwidth Product: 1 MHz (typical) •

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Ordering number : EN*5239A CMOS LSI LE28F4001M, T, R-15/20 4 MEG (524288 words × 8 bits) Flash Memory Preliminary Overview The LE28F4001 Series ICs

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MODEL HM53 SERIES High Power Low Cost Inductors NEW PRODUCT FEATURES AND BENEFITS • High current capability • Single layer, cost effective design •

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DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Sem

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Replaced by MMG1001NT1. N suffix indicates 260°C reflow capable. The

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Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

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Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are

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MODEL HM53 SERIES High Power Low Cost Inductors NEW PRODUCT FEATURES AND BENEFITS • High current capability • Single layer, cost effective design •

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MODEL HM53 SERIES High Power Low Cost Inductors NEW PRODUCT FEATURES AND BENEFITS • High current capability • Single layer, cost effective design •

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GROUP-TEK R A Leading Supplier of Magnetic Components PCM33001R 1.Mechanical Dimensions: FRONT VIEW A PCM33001R TF-1093040 SIDE VIEW GTYYMM D E

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APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t

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D TO-247 G S APT1001R6BN 1000V 8.0A 1.60Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMG2001R2/D Gallium Arsenide CATV Integrated Amplifier

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FJY3001R NPN Epitaxial Silicon Transistor November 2006 FJY3001R NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface

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Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.60Ω D3PAK POWER MOS 7 ® R FREDFET TO-247 Power MOS 7 is a

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Multilayer Ceramic Transient Voltage Suppressors (USB Series) USB Series are designed to protect the high speed data lines against ESD transients. Th

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