TOSHIBA Transistor Silicon NPN Triple Diffused Typ.
ON Semiconductor
2SC5200 - NPN Transistor
NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30 .
Toshiba Semiconductor
2SC5200 - NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
Sanyo Semicon Device
C5297 - 2SC5297
w w w . D a t a S h e e t . c o . k r Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Def.
STMicroelectronics
2SC5200 - NPN Transistor
2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t.
SavantIC
C5296 - Silicon NPN Power Transistors
SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC5296 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high r.
IXYS
K3503FC520 - Medium Voltage Thyristor
WESTCODE An IXYS Company Date:- 17 Nov, 2004 Data Sheet Issue:- 1a Provisional Data Medium Voltage Thyristor Types K3503F#450 to K3503.
Toshiba
C5200 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.
SavantIC
2SC5299 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5299 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High br.
Toshiba
2SC5200N - NPN Transistor
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .
Toshiba
C5200N - NPN Transistor
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .
JILIN SINO
2SC5200A - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A APPLICATIONS Power Amplifier Applications ：VCEO=230V (min) 2SA1943A 100W （Ro.
UTC
2SC5200 - NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fideli.
Fairchild Semiconductor
2SC5200 - NPN Epitaxial Silicon Transistor
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High.
Panasonic Semiconductor
C5244 - 2SC5244
Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features 20.0±0.5 φ 3.3±0..
Sanyo
C5238 - 2SC5238
Ordering number:EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applicat.
Toshiba
C5232 - 2SC5232
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application 2S.
Hitachi
C5237 - 2SC5237
2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 400 MHz typ • High voltag.
Intel
80C52 - CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
8XC52 54 58 CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER Commercial Express 87C52 80C52 80C32 87C54 80C54 87C58 80C58 See Table 1 for Proliferation Options.
NXP
87C524 - 80C51 8-bit microcontrollers
INTEGRATED CIRCUITS 87C524/87C528 80C51 8-bit microcontrollers 16K/32K, 512 OTP, I2C, watchdog timer Product specification Replaces data sheets 87C52.
