CS7N60 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS7N60 A4R ○R General Description： CS7N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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JCS7N60F-R-F-N-B-VB JCS7N60F-R-F-N-B-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25

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JCS7N60F /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (n

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N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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N R N-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 7.0 A 600 V 1.0Ω 23 nC ⚫ ⚫ ⚫ LED APPLIC

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N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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Silicon N-Channel Power MOSFET CS7N60F A9HDY ○R General Description： CS7N60F A9HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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Silicon N-Channel Power MOSFET ○R CS7N60 A8R General Description： CS7N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

(16 views)

N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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Silicon N-Channel Power MOSFET CS7N60F A9R ○R General Description： CS7N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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CS7N60 VDMOS ：、。 ：，，。TO-220/TO-220F。 ，，Tc= 25℃ VDSS 600 V ID 7A IDM 28 A VGS ±30 V TO-220 PD TO-220F Tj Tstg 110 4

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Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS7N60FA9HD General Description： CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs,

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N R N-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 7.0 A 600 V 1.0Ω 23 nC ⚫ ⚫ ⚫ LED APPLIC

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N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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Silicon N-Channel Power MOSFET CS7N60 A8HD ○R General Description： CS7N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

(14 views)

N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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Silicon N-Channel Power MOSFET CS7N60 A7HD ○R General Description： CS7N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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N R N-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 7.0 A 600 V 1.0Ω 23 nC ⚫ ⚫ ⚫ LED APPLIC

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N R N-CHANNEL MOSFET JCS7N60E MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 7.0 A 600 V 1.0Ω 23 nC ⚫ ⚫ ⚫ LED APPLIC

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Silicon N-Channel Power MOSFET CS7N60 A3R ○R General Description： CS7N60 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

(9 views)